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STILLINGER-WEBER TYPE POTENTIALS IN MONTE-CARLO SIMULATION OF AMORPHOUS-SILICON
Date
1992-01-01
Author
DERELI, G
Metadata
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The growth of amorphous silicon on a substrate of a two-layer slab of crystalline silicon with various surface indices is simulated with Stillinger-Weber type interatomic potentials. The growth is realized by means of a continuum Monte Carlo method and the radial distribution functions are evaluated for various cases.
Subject Keywords
Modelling and Simulation
,
General Materials Science
,
General Chemistry
,
General Chemical Engineering
,
Condensed Matter Physics
,
Information Systems
URI
https://hdl.handle.net/11511/63924
Journal
MOLECULAR SIMULATION
DOI
https://doi.org/10.1080/08927029208022490
Collections
Department of Physics, Article
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G. DERELI, “STILLINGER-WEBER TYPE POTENTIALS IN MONTE-CARLO SIMULATION OF AMORPHOUS-SILICON,”
MOLECULAR SIMULATION
, pp. 351–360, 1992, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/63924.