The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes

Date

2011-01-01

Author

Ozdemir, Selahattin
DÖKME, İLBİLGE
ALTINDAL, ŞEMSETTİN

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

47
views

0
downloads

Metal-insulator-semiconductor Schottky diodes were fabricated to investigate the tunnel effect and the dominant carrier transport mechanism by using current density-voltage (J-V) and capacitance-voltage (C-V) measurements in the temperature range of 295-370 K. The slope of the ln J-V curves was almost constant value over the nearly four decades of current and the forward bias current density J is found to be proportional to Jo (T) exp(AV). The values of Nss estimated from J-V and C-V measurements decreased with increasing temperature. The temperature dependence of the barrier heights obtained from forward bias J-V was found to be entirely different than that from the reverse bias C-V characteristics. All these behaviours confirmed that the prepared samples have a tunnel effect and the current transport mechanism in the temperature range of 295-370 K was predominated by a trap-assisted multi-step tunnelling, although the Si wafer has low doping concentration and the measurements were made at moderate temperature.

Subject Keywords

Electrical and Electronic Engineering

URI

https://hdl.handle.net/11511/66580

Journal

INTERNATIONAL JOURNAL OF ELECTRONICS

DOI

https://doi.org/10.1080/00207217.2011.560555

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Solutions of new potential integral equations using approximate stable diagonalization of the Green's function Gur, U.M.; Karaosmanoglu, B.; Ergül, Özgür Salih (2017-09-15) We present efficient and accurate solutions of scattering problems involving dense discretizations with respect to wavelength. Recently developed potential integral equations (PIEs) for stable solutions of low-frequency problems are used to formulate such challenging problems, where the electric current density and magnetic vector potential are defined as unknowns. For solving problems discretized with large numbers of unknowns, we further use an approximate diagonalization of the Green's function within th...
Contamination of the Accuracy of the Combined-Field Integral Equation With the Discretization Error of the Magnetic-Field Integral Equation Gurel, Levent; Ergül, Özgür Salih (Institute of Electrical and Electronics Engineers (IEEE), 2009-09-01) We investigate the accuracy of the combined-field integral equation (CFIE) discretized with the Rao-Wilton-Glisson (RWG) basis functions for the solution of scattering and radiation problems involving three-dimensional conducting objects. Such a low-order discretization with the RWG functions renders the two components of CFIE, i.e., the electric-field integral equation (EFIE) and the magnetic-field integral equation (MFIE), incompatible, mainly because of the excessive discretization error of MFIE. Solutio...
Efficient solution of the electric-field integral equation using the iterative LSQR algorithm Ergül, Özgür Salih (Institute of Electrical and Electronics Engineers (IEEE), 2008-01-01) In this letter, we consider iterative solutions of the three-dimensional electromagnetic scattering problems formulated by surface integral equations. We show that solutions of the electric-field integral equation (EFIE) can be improved by employing an iterative least-squares QR (LSQR) algorithm. Compared to many other Krylov subspace methods, LSQR provides faster convergence and it becomes an alternative choice to the time-efficient no-restart generalized minimal residual (GMRES) algorithm that requires la...
A New Approach to Investigation of the Relationship of VLF Signals by Using Longitudinal Analysis Models Guzel, E.; Yaşar, M.; Kılıç, M. B.; Canyılmaz, M. (Hindawi Limited, 2013) Longitudinal analysis models are applied to analyze very low frequency (VLF) electromagnetic waves signals. They are useful in realization of nuance of relationship between parameters of concern which change over time. VLF data are so important for the communication and determining the disturbances in the lower ionosphere. In this study, we used a four-day VLF signal data which come from transmitter stations located at two different countries to Elazi. g receiver system. A very important feature of this dat...
A Domain Decomposition Finite-Element Method for Modeling Electromagnetic Scattering From Rough Sea Surfaces With Emphasis on Near-Forward Scattering ÖZGÜN, ÖZLEM; Kuzuoğlu, Mustafa (Institute of Electrical and Electronics Engineers (IEEE), 2019-01-01) A high-fidelity full-wave simulator is presented to perform numerical experiments for rough sea scattering problem by considering different polarizations, frequencies, grazing angles, wind speeds, and sea surface spectra. The simulator is based on a novel finite-element domain decomposition (FEDD) method for solving the problem of 2-D electromagnetic scattering over 1-D sea surface. This noniterative method partitions the computational domain into a number of overlapping subdomains and solves each domain in...

Citation Formats

S. Ozdemir, İ. DÖKME, and Ş. ALTINDAL, “The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes,” INTERNATIONAL JOURNAL OF ELECTRONICS, pp. 699–712, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/66580.