Monte-Carlo simulation of MBE growth of GaAs analysis of RHEED

Date

1997-10-01

Author

Van Hall, PJ
Kokten, H
Leys, MR
Bosch, M

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We have performed Monte-Carlo simulations of the growth of GaAs by MBE. We included in our calculations the anisotropy of the migration, the formation of As-dimers and a partial desorption of the As. As an observable we calculated the RHEED signal of the specularly reflected electrons. The results have been compared with experimental data comprising both the damping of the oscillations and the recovery following a growth interrupt. The agreement between experiment and calculations is rather good. Moreover we could identify the mechanisms underlying the fast and the slow component of the recovery.

Subject Keywords

Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics

URI

https://hdl.handle.net/11511/67446

Journal

SURFACE REVIEW AND LETTERS

DOI

https://doi.org/10.1142/s0218625x97000948

Collections

Department of Physics, Article

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Citation Formats

P. Van Hall, H. Kokten, M. Leys, and M. Bosch, “Monte-Carlo simulation of MBE growth of GaAs analysis of RHEED,” SURFACE REVIEW AND LETTERS, pp. 869–872, 1997, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67446.