Stability and degradation of plasma deposited boron nitride thin films in ambient atmosphere

Anutgan, Tamila Aliyeva
Anutgan, Mustafa
Atilgan, Ismail
Katircioglu, Bayram
Boron nitride (BN) thin films were deposited at 296 K, 398 K, 523 K and 623 K by low power radio frequency plasma enhanced chemical vapor deposition with nitrogen (N-2.) and hydrogen diluted diborane (15% B2H6 in H-2) source gases. Fourier transform infrared and UV-visible spectroscopies were used to investigate the stability and degradation of BN films under ambient air conditions. The action of moisture on the films is reduced with increasing substrate temperature (T-s) to the detriment of the film growth rate. This has been interpreted as related to the decrease in porosity and relative volume fraction of B-O containing disordered tissue at higher T-s The thickness of the unstable films increases logarithmically with the air exposure time. Parallel to this, although the E-o4 gap increases logarithmically with time, the Tauc gap remains the same. The increase of subgap absorptions and the decrease of Tauc slope with time indicate reduction of structural order. Crystallites of ammonium borate hydrates, the main product of the chemical reactions, are initially formed within the bulk. At a later time, as a result of increased porosity and disorder, the film thickness decreases while the islands of micro-crystallites rapidly grow above the surface of the film. Stability dependence on other deposition parameters was also studied: it is found that the 1260/1360 cm(-1) (O-B-O/B-N) infrared peak area ratio plays an indicator role to reveal the stability of BN films.


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Akaoglu, B; Atilgan, I; Katircioglu, B (Elsevier BV, 2003-08-01)
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AYGÜN ÖZYÜZER, GÜLNUR; Turan, Raşit (Elsevier BV, 2008-11-28)
Tantalum pentoxide (Ta(2)O(5)) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta deposited films with various thickness on Si. Fourier Transform Infrared (FTIR) spectrum, thickness distribution, dielectric and electrical properties of laser grown oxide layers have been studied. The effect of the sputtered Ta film thickness, laser beam energy density and the substrate temperature on the final Ta(2)O(5) film structure has been determined. It is shown that the oxide layers obtain...
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Structural and optical properties of thallium indium disulfide (TlInS2) thin films, deposited by thermal evaporation technique and thermally annealed at different temperatures, were analyzed. Crystallite size, dislocation density and lattice strain of the thin films were found from X-ray diffraction experiments. The atomic compositions of the films were determined from energy dispersive spectroscopy analysis. Surface morphology of the films was analyzed using atomic force microscopy. From room temperature t...
Effect of heat treatment on the stress and structure evolution of plasma deposited boron nitride thin films
Anutgan, T. Aliyeva; Anutgan, M.; Wdemir, O.; Atilgan, I.; Katircioglu, B. (Elsevier BV, 2008-03-25)
Boron nitride (BN) thin films are deposited at 573 K by plasma enhanced chemical vapor deposition (PECVD) with ammonia (NH3) and hydrogen diluted diborane (15% B2H6 in H-2) source gases. UV-visible and Fourier transform infrared (FTIR) spectroscopies together with surface profilometry are used for the film characterization. These films are hydrogenated (BN:H) whose hydrogen content is pursued following the 1.5 h annealing process at 748 K, 923 K and 1073 K under nitrogen atmosphere. Hydrogen escape with the...
Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films
AYGÜN ÖZYÜZER, GÜLNUR; Cantas, Ayten; Simsek, Yilmaz; Turan, Raşit (Elsevier BV, 2011-06-30)
HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O-2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. Th...
Citation Formats
T. A. Anutgan, M. Anutgan, I. Atilgan, and B. Katircioglu, “Stability and degradation of plasma deposited boron nitride thin films in ambient atmosphere,” THIN SOLID FILMS, pp. 419–425, 2009, Accessed: 00, 2020. [Online]. Available: