Influences of carbon content and power density on the PECVD grown a-Si1-x : C-x : H thin films

Date

2006-09-16

Author

Akaoglu, B.
Gulses, A.
Atilgan, I.
Katircioglu, B.

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Large area electronics require large size thin films whose eventual inhomogeneities arise as a problem. Hydrogenated amorphous silicon carbide thin films (a-Si1-xCx:H) for four different source gas mixtures at two power densities were deposited by plasma enhanced chemical vapor deposition (PECVD) technique. The degree of film homogeneity was investigated through measurements of deposition rate, refractive index and optical energy gap along the radial direction of bottom electrode. Both ellipsometer at various incident angles and optical transmittance at normal incidence were used in mutual control as diagnosing tools. It seems there is a critical power density beyond which inhomogeneities of the deposited films along the radial direction of the electrode are unavoidable.

Subject Keywords

Instrumentation, Surfaces, Coatings and Films, Condensed Matter Physics

URI

https://hdl.handle.net/11511/67561

Journal

VACUUM

DOI

https://doi.org/10.1016/j.vacuum.2006.03.005

Collections

Department of Physics, Article

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Citation Formats

B. Akaoglu, A. Gulses, I. Atilgan, and B. Katircioglu, “Influences of carbon content and power density on the PECVD grown a-Si1-x : C-x : H thin films,” VACUUM, pp. 120–125, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67561.