InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

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Date

2018-04-01

Author

Sheremet, V.
Gheshlaghi, N.
Sozen, M.
Elci, M.
Sheremet, N.
AYDINLI, ATİLLA
ALTUNTAŞ, İSMAİL
Ding, K.
Avrutin, V.
Ozgur, U.
Morkoc, H.

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We investigate the effect of InGaN stress compensation layer on the properties of light emitting diodes based on InGaN/GaN multiple quantum well (MQW) structures with step graded electron injectors. Insertion of an InGaN stress compensation layer between n-GaN and the step graded electron injector provides, among others, strain reduction in the MQW region and as a result improves epitaxial quality that can be observed by 15-fold decrease of V-pit density. We observed more uniform distribution of In between quantum wells in MQW region from results of electro- and photoluminescence measurement. These structural improvements lead to increasing of radiant intensity by a factor of 1.7-2.0 and enhancement of LED efficiency by 40%.

Subject Keywords

Light-emitting diode, Step-graded electron injector, Stress compensation layer, InGaN/GaN

URI

https://hdl.handle.net/11511/68572

Journal

SUPERLATTICES AND MICROSTRUCTURES

DOI

https://doi.org/10.1016/j.spmi.2018.02.002

Collections

Graduate School of Applied Mathematics, Article

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Citation Formats

V. Sheremet et al., “InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors,” SUPERLATTICES AND MICROSTRUCTURES, pp. 253–261, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68572.