Evolution of Al/Al2O3 Layer and Na Diffusion During N2 Anneal

Date

2016-05-02

Author

Ünal, Mustafa
Sökmen, İlkay
Çolakoğlu, Tahir
Turan, Raşit

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https://hdl.handle.net/11511/70727

Conference Name

European Materials Research Society Spring Meeting 2016

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Unverified, Conference / Seminar

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Evolution of Vibrational Modes of SiO2 During the Formation of Ge and Si Nanocrystals by Ion Implantation and Magnetron Sputtering İMER, ALİ; Yerci, Selçuk; ALAGOZ, A. S.; KULAKCI, M.; SERINCAN, U.; FINSTAD, T. G.; Turan, Raşit (2010-01-01) Structural variations of SiOx matrix have been studied with Fourier Transform Infrared Spectroscopy (FTIR) during the formation of Si and Ge nanocrystal. Two frequently used methods, magnetron sputtering and ion implantation have been employed to form SiOx matrix containing excess Si and Ge. The Si-O-Si stretching mode has been deconvoluted to monitor the evolution of SiOx films during the annealing process. The integrated area and the shift in the SiOx peak positions are found to be well correlated with th...

Citation Formats

M. Ünal, İ. Sökmen, T. Çolakoğlu, and R. Turan, “Evolution of Al/Al2O3 Layer and Na Diffusion During N2 Anneal,” presented at the European Materials Research Society Spring Meeting 2016, Lille, Fransa, 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/70727.