A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO

Date

2005-08-18

Author

İmer, Muhsine Bilge
Speck, James S
Denbaars, Steven P

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URI

https://hdl.handle.net/11511/70804

Conference Name

6th International Conference on Nitride Semiconductors (ICNS) (2005)

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Unverified, Conference / Seminar

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Citation Formats

M. B. İmer, J. S. Speck, and S. P. Denbaars, “A New Approach to Defect Reduction in Non polar a GaN Sidewall Lateral Epitaxial Overgrowth SLEO,” presented at the 6th International Conference on Nitride Semiconductors (ICNS) (2005), Bremen, Almanya, 2005, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/70804.