Double stub and triple stub RF MEMS impedance tuners

Date

2007-06-29

Author

Akın, Tayfun

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This paper presents two different reconfigurable RF MEMS impedance tuners. One of them is a double stub tuner with ohmic contact switches for 1-6 GHz applications and the other is a triple stub tuner with capacitive contact switches for 10-20 GHz applications. The double stub tuner is designed for impedance and noise matching of a two-stage low noise amplifier for 1.8-1.9 GHz, 2.1-2.2 GHz, and 4.9-5.9 GHz bands which correspond to the DCS1800, UMTS, and WLAN bands, respectively. 15 ohmic contact, series MEMS switches are used, each having a measured insertion loss of better than 0.2 dB and an isolation of better than 30 dB in 1.8-5.9 GHz band. The double stub tuner has a worst-case VSWR of 1.48:1 and an average VSWR of 1.2:1 in the operation bands. The triple stub tuner is designed to cover the maximum area on the Smith Chart in 10-20 GHz band with 10 capacitive contact MEMS switches on each stub. Electrical length of each stub is λ g/2 centered at 18 GHz. Simulations present an almost uniform coverage of the whole Smith Chart in 10-20 GHz. Both impedance tuners are fabricated using an in-house process developed at Microelectronic Facilities of Middle East Technical University. Measured performance of the fabricated tuners are in good agreement with simulations.

URI

https://hdl.handle.net/11511/73127

Conference Name

Proceedings of 8th International Symposium on RF MEMS and RF Microsystems, MEMSWAVE (26 - 29 Haziran 2007)

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

T. Akın, “Double stub and triple stub RF MEMS impedance tuners,” Barcelona, İspanya, 2007, p. 169, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/73127.