Dielectric properties of electron beam evaporated ZnSe/Si heterostructures in the wide frequency range

Date

2017-11-11

Author

Yıldız, Dilber Esra
Güllü, H H
Bayraklı, Özge
Parlak, Mehmet

Metadata

Show full item record

Item Usage Stats

78
views

0
downloads

URI

https://hdl.handle.net/11511/73189

Collections

Unverified, Conference / Seminar

Suggestions

OpenMETU
Core

Dielectric functions and interband critical points of anisotropic chain structured TlSe single crystals IŞIK, MEHMET; Hasanlı, Nızamı (2012-10-15) Spectroscopic ellipsometry measurements were carried out on TlSe single crystals for orientations of electric field, parallel (E parallel to c), and perpendicular (E perpendicular to c) to optic axis c. The experiments were performed in the 1.2-6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were calculated from the analysis of ellipsometric data under the light of ambient-substrate op...
Dielectric response of a quasi-one-dimensional electron gas Sunar, Ulaş; Tomak, Mehmet; Department of Physics (1998)
Dielectric matrix influence on the photoluminescence properties of silicon nanocrystals Ferraioli, L.; Cazzanelli, M.; Daldosso, N.; Mulloni, V.; Bellutti, P.; Yerci, Selçuk; Turan, Raşit; Mikhaylov, A.n.; Tetelbaum, D.ı.; Pavesi, L. (null; 2006-12-01) Photoluminescence properties of silicon nanocrystals embedded in five different oxide matrices are analyzed. Samples are silicon rich oxide and oxynitride produced by PECVD and ion implantation and crystalline and amorphous aluminum oxide implanted with silicon.
Dielectric and photo-dielectric properties of TlGaSeS crystals Qasrawi, A. F.; Abu-Zaid, Samah F.; Ghanameh, Salam A.; Hasanlı, Nızamı (2014-05-01) The room temperature, dark and photo-dielectric properties of the novel crystals TlGaSeS are investigated in the frequency, intensity and biasing voltage having ranges of similar to 1-120 MHz, 14-40 klux and 0-1 V, respectively. The crystals are observed to exhibit a dark high frequency effective dielectric constant value of similar to 10.65 x 10(3) with a quality factor of similar to 8.84 x 10(4) at similar to 120 MHz. The dielectric spectra showed sharp resonance-antiresonance peaks in the frequency range...
Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs quantum wells Beşikci, Cengiz; Tanatar, B (2000-08-01) The effects of dielectric screening on the two dimensional polar optical phonon scattering and on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs (x=0, 0.15, and 0.25) modulation doped heterostructures and high electron mobility transistors are investigated through the ensemble Monte Carlo technique. The two dimensional polar optical phonon scattering rates including and excluding dielectric screening effects are calculated using the self-consistently evaluated electronic states in the quantum well. The...

Citation Formats

D. E. Yıldız, H. H. Güllü, Ö. Bayraklı, and M. Parlak, “Dielectric properties of electron beam evaporated ZnSe/Si heterostructures in the wide frequency range,” 2017, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/73189.