Fabrication and characterization of p CuInSe2 n Si Heterojunction Diode

Güllü, Hasan Hüseyin
Bayraklı, Özge
Coşkun, Emre
Parlak, Mehmet


Fabrication and Electrical Characterization of p-AgGa0.5In0.5Te2 Thin Film Heterostructure with Cd-Free Front Layer
Bayraklı, Özge; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (null; 2018-09-05)
Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes
AKGÜL, GÜVENÇ; AKSOY, FUNDA; Mulazimoglu, Emre; Ünalan, Hüsnü Emrah; Turan, Raşit (IOP Publishing, 2014-02-12)
In this study, copper oxide (CuO) thin film/silicon (Si) nanowire heterojunctions have been fabricated and their optoelectronic performances have been investigated. Vertically aligned n-type Si nanowires have been fabricated using metal-assisted etching (MAE) technique. CuO thin films were synthesized by the sol-gel method and deposited onto the nanowires through spin-coating. Fabricated nanowire heterojunction devices exhibited excellent diode behaviour compared to the planar heterojunction control device....
Fabrication and Characterization of Gold-Tin Eutectic Bonding for Hermetic Packaging of MEMS Devices
DEMIR, Eyup Can; TORUNBALCI, M. Mert; DONMEZ, Inci; Kalay, Yunus Eren; Akın, Tayfun (2014-12-05)
This paper presents the fabrication of wafer-level hermetic encapsulation for MEMS devices using low-temperature (300 degrees C) Au-Sn bonding together with their pre- and post-bonding characterization. Thermal evaporation method was used for metallization which is easy and controllable method for low thickness metallization. In this respect, the current study represents preliminary characterization results of Au-Sn pre-and post-bonding with an average thickness of less than 1.5 mu m processed by thermal ev...
Fabrication and characterization of Si-PIN photodiodes
Doganci, Emre; Kaya, Senol; Aktag, Aliekber; Duman, Elif Sarigul; Turan, Raşit; Karacali, Huseyin; Yilmaz, Ercan (The Scientific and Technological Research Council of Turkey, 2019-01-01)
In this work, characteristics of silicon-based p(+) type, intrinsic (I), n(-) type (Si-PIN) photodiodes with active area of 3.5 x 3.5 mm(2), 5.0 x 5.0 mm(2), or 7.0 x 7.0 mm(2) and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center (NURDAM) of Bolu Abant izzet Baysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the ...
Fabrication and characterization of boron doped BaZrO3 nanofibers via an electrospinning technique
TUNÇ, TUNCAY; Uslu, I.; Keskin, Serhat (2011-10-01)
In this study, boron doped and undoped poly(vinyl) alcohol/zirconium-barium acetate (PVA/Zr-Ba) nanofibers were prepared using an electrospinning technique then calcinated at three different temperatures; 250 degrees C, 500 degrees C, 800 degrees C for 2 h. The originality of this study is the addition of boron to metal acetates. The fibers were characterized by FT-IR, DSC, XRD and SEM. The addition of boron did not only increase the thermal stability of the fibers, but also increased their diameters, which...
Citation Formats
H. H. Güllü, Ö. Bayraklı, E. Coşkun, and M. Parlak, “Fabrication and characterization of p CuInSe2 n Si Heterojunction Diode,” 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/74021.