Fabrication and characterization of p CuInSe2 n Si Heterojunction Diode

Güllü, Hasan Hüseyin
Bayraklı, Özge
Coşkun, Emre
Parlak, Mehmet


Fabrication and characterization of nbn Inas/Gasb/B-Al(x)ga(1-x)sb type-II superlattice detectors with dual-color detection in mwir
Çekmez, Utku; Akın, Tayfun; Azgın, Kıvanç; Department of Micro and Nanotechnology (2022-4-28)
Type-II superlattice detectors with nBn structure made it possible to detect at higher temperatures due to the suppressing of the dark current components originating from Shockley-Read-Hall (SRH). In this context, the Al(x)Ga(1-x)Sb layer with wider band-gap energy was designed to act as an electron barrier between the n-doped N-Structure InAs/AlSb/GaSb type-II superlattice layers, whose active layers are capable of dual-color detection at mid-wavelength. In this thesis work, the fabrication processes of th...
Fabrication and Electrical Characterization of p-AgGa0.5In0.5Te2 Thin Film Heterostructure with Cd-Free Front Layer
Bayraklı, Özge; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (null; 2018-09-05)
Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes
AKGÜL, GÜVENÇ; AKSOY, FUNDA; Mulazimoglu, Emre; Ünalan, Hüsnü Emrah; Turan, Raşit (IOP Publishing, 2014-02-12)
In this study, copper oxide (CuO) thin film/silicon (Si) nanowire heterojunctions have been fabricated and their optoelectronic performances have been investigated. Vertically aligned n-type Si nanowires have been fabricated using metal-assisted etching (MAE) technique. CuO thin films were synthesized by the sol-gel method and deposited onto the nanowires through spin-coating. Fabricated nanowire heterojunction devices exhibited excellent diode behaviour compared to the planar heterojunction control device....
Fabrication and Characterization of Gold-Tin Eutectic Bonding for Hermetic Packaging of MEMS Devices
DEMIR, Eyup Can; TORUNBALCI, M. Mert; DONMEZ, Inci; Kalay, Yunus Eren; Akın, Tayfun (2014-12-05)
This paper presents the fabrication of wafer-level hermetic encapsulation for MEMS devices using low-temperature (300 degrees C) Au-Sn bonding together with their pre- and post-bonding characterization. Thermal evaporation method was used for metallization which is easy and controllable method for low thickness metallization. In this respect, the current study represents preliminary characterization results of Au-Sn pre-and post-bonding with an average thickness of less than 1.5 mu m processed by thermal ev...
Fabrication and characterization of Si-PIN photodiodes
Doganci, Emre; Kaya, Senol; Aktag, Aliekber; Duman, Elif Sarigul; Turan, Raşit; Karacali, Huseyin; Yilmaz, Ercan (The Scientific and Technological Research Council of Turkey, 2019-01-01)
In this work, characteristics of silicon-based p(+) type, intrinsic (I), n(-) type (Si-PIN) photodiodes with active area of 3.5 x 3.5 mm(2), 5.0 x 5.0 mm(2), or 7.0 x 7.0 mm(2) and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center (NURDAM) of Bolu Abant izzet Baysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the ...
Citation Formats
H. H. Güllü, Ö. Bayraklı, E. Coşkun, and M. Parlak, “Fabrication and characterization of p CuInSe2 n Si Heterojunction Diode,” 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/74021.