Plasma Assisted Low TemperatureElectron Beam Deposition of NiO Thin Films for Electro-Optic Applications

Coşar, Mustafa Burak
İçli, Kerem Çağatay
Özenbaş, Ahmet Macit


Plasma assisted low temperature electron beam deposited NiO thin films for electro-optic applications
Cosar, Mustafa Burak; Icli, Kerem Cagatay; Özenbaş, Ahmet Macit (2018-05-01)
This study aims to create high quality nickel oxide (NiO) thin films at low temperatures, which is a prerequisite for coatings on temperature sensitive substrates. NiO chunks were evaporated by electron beam source, and NiO thin films were deposited at a thickness value around 250 nm. Depositions were performed at different experimental conditions: oxygen flow rate, deposition temperature, deposition rate, and plasma assistance. Deposited films were analyzed with regard to the structural, optical, and elect...
Plasma Synthesis of AlNiCo Core/Shell Nanopowders
Genç, Ayşe Merve; Öztürk, Tayfur; Kalay, Yunus Eren (2018-11-26)
Aluminum-nickel-cobalt (AlNiCo) permanent magnets revolutionized the permanent magnet industry in 1920’s but has not been thoroughly studied after the development of powerful rare-earth permanent magnets. As compared to rare-earth magnets, AlNiCo magnets have high remanent force (Br), better corrosion resistance and higher Curie temperature but lack high coercivity. If the coercivity is improved, BHmax value may increase up to values that would potentially fill the gap in between rare-earth and rare-earth f...
Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers
Bayram, Barış; Akın, Tayfun (2010-11-01)
Diamond-on-insulator (DOI) wafers featuring ultrananocrystalline diamond are studied via atomic force microscopy, profilometer and wafer bow measurements. Plasma-activated direct bonding of DOI wafers to thermal oxide grown silicon wafers is investigated under vacuum. DOI wafer with chemical mechanical polishing (CMP) on the diamond surface makes a poor bonding to silicon wafers with thermal oxide. Our results show that plasma enhanced chemical vapor deposition of silicon dioxide on top of the DOI wafer, CM...
Plasma-activated direct bonding of patterned silicon-on-insulator wafers to diamond-coated wafers under vacuum
Can, Uryan Isik; Bayram, Barış (2014-08-01)
Direct wafer bonding requires the surfaces to have low surface roughness (R-a < 0.5 nm) as well as to be free of any particles or contaminants. Meeting these requirements for wafers patterned with lithography and dry etching presents a serious problem in terms of removal of photoresist residue and etch-related particles, which would require expensive additional equipment to be removed. In this study, we propose the use of chemical mechanical polishing (CMP) to be performed after all lithography and dry etch...
Plasma Sensing Using Terahertz Waves
Altan, Hakan (2009-11-06)
Citation Formats
M. B. Coşar, K. Ç. İçli, and A. M. Özenbaş, “Plasma Assisted Low TemperatureElectron Beam Deposition of NiO Thin Films for Electro-Optic Applications,” 2017, Accessed: 00, 2021. [Online]. Available: