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Investigation of Turn-on and Turn-off Characteristics of Enhancement-Mode GaN Power Transistors
Date
2018-10-30
Author
Karakaya, Furkan
Dilberoğlu, Mecid Uğur
Keysan, Ozan
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In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are investigated. An analytical model is developed to analyze the current-voltage characteristics of the device during switching transients both with and without the effects of parasitic components. In addition, the effect of the temperature and circuit parameters on the switching characteristics are investigated.
URI
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057069382&origin=inward
https://hdl.handle.net/11511/75265
Conference Name
20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe, (17 - 21 Eylül 2018)
Collections
Department of Electrical and Electronics Engineering, Conference / Seminar
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F. Karakaya, M. U. Dilberoğlu, and O. Keysan, “Investigation of Turn-on and Turn-off Characteristics of Enhancement-Mode GaN Power Transistors,” Riga, Letonya, 2018, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057069382&origin=inward.
