Investigation of Turn-on and Turn-off Characteristics of Enhancement-Mode GaN Power Transistors

2018-10-30
In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are investigated. An analytical model is developed to analyze the current-voltage characteristics of the device during switching transients both with and without the effects of parasitic components. In addition, the effect of the temperature and circuit parameters on the switching characteristics are investigated.
20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe, (17 - 21 Eylül 2018)

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Citation Formats
F. Karakaya, M. U. Dilberoğlu, and O. Keysan, “Investigation of Turn-on and Turn-off Characteristics of Enhancement-Mode GaN Power Transistors,” Riga, Letonya, 2018, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057069382&origin=inward.