Device Characterization of ZnInSe2 Thin Films T P2 28

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2016-05-05

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Güllü, Hasan Hüseyin
Parlak, Mehmet

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https://hdl.handle.net/11511/77645

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Device Characterization of ZnInSe2 Thin Films Gullu, H. H.; Parlak, Mehmet (Elsevier BV; 2016-01-01) p-Si/n-ZnInSe2 hetero-junction diode was deposited by thermal evaporation of elemental evaporation sources on the 600 mu m thick p-type (1 1 1) mono-crystalline Si wafers having the resistivity value of 1 - 3 (Omega.cm). Detailed electrical characterization of the hetero-junction was performed by the help of temperature dependent current-voltage measurements. The forward current-voltage behaviour of the hetero-junction diode was investigated under the evaluation of possible current transport mechanisms. In ...
Device Characterization of Zn Sn Se ZTSe Thin Films for Solar Cells T P2 69 Bayraklı, Özge; Güllü, Hasan Hüseyin; Coşkun, Emre; Parlak, Mehmet (2016-05-05)
Device Behavior Of CZTSe/Si Nanowire Heterojunction Sürücü, Gökhan; Bayraklı, Özge; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Parlak, Mehmet (null; 2017-10-28)
Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode Coskun, EMRE; Gullu, H. H.; CANDAN, İDRİS; Bayrakli, O.; Parlak, Mehmet; Ercelebi, C. (2015-06-01) In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 ...
Device Measurements and Analysis of Ag Ga In Te Based Thin Film Heterojunction Diode Ö Bayraklı H H Güllü and M Parlak SolarTR 3 3rd Turkish Solar Electricity Conference and Exhibition 27 29 April 2015 Bayraklı, Özge; Güllü, Hasan Hüseyin; Parlak, Mehmet (null; 2015-04-29)

Citation Formats

H. H. Güllü and M. Parlak, “Device Characterization of ZnInSe2 Thin Films T P2 28,” 2016, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77645.