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Anomalous Nanocrystallization Behavior in Marginal Glass Forming Alloys
Date
2015-03-15
Author
Kutsal, Mustafacan
Sikan, Fatih
Ovun, Mert
Kalay, Yunus Eren
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https://hdl.handle.net/11511/78041
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InSb epitaxial layers have been grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. A 3.15-mum-thick film yielded an x-ray full width at half maximum of 171 arcsec. A Hall mobility of 76 200 cm2/V s at 240 K and a full width at half maximum of 174 arcsec have been measured for a 4.85-mum-thick epilayer. Measured Hall data have shown anomalous behavior. A decrease in Hall mobility with decreasing temperature has been observed and room-temperature Hall mobility has increased with ...
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Trap centers in Tl2GaInS4 single crystals have been investigated by thermoluminescence (TL) measurements in the temperature range of 10-110 K. Curve-fitting method was utilized to evaluate the activation energies (12 and 26 meV) of revealed two trap centers. Thermal cleaning method was applied to the spectra and two overlapping peaks were reduced to one single peak corresponding to deeper trap level. The characteristics of heating rate dependence and trap distribution of the separated peak have been studied...
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We have calculated the differential probability of the radiative decay, tau(-) --> upsilon(tau) + pi(-) + gamma, of the tau-lepton carrying an anomalous magnetic moment. Taking into account both the inner bremsstrahlung and the structure-dependent radiation contributions, we computed the double differential probability. Observables, which are particularly suitable for the full reconstruction of the vector and axial form factors, are identified and implications for the measurement of the anomalous magnetic m...
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M. Kutsal, F. Sikan, M. Ovun, and Y. E. Kalay, “Anomalous Nanocrystallization Behavior in Marginal Glass Forming Alloys,” 2015, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/78041.