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Defect center parameters in β-irradiated MgO nanoparticles
Date
2018-06-08
Author
Hasanlı, Nızamı
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URI
https://hdl.handle.net/11511/79248
https://rad2018.rad-conference.org/title_list.php
Conference Name
The Sixth International Conference on Radiation and Applications in Various Fields of Research (RAD 2018)
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Department of Physics, Conference / Seminar
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The diffusion mechanism of indium atoms along multiwalled carbon nanotubes is studied by means of photoemission spectromicroscopy and density functional theory calculations. The unusually high activation temperature for diffusion (approximate to 700 K), the complex C 1s and In 3d(5/2) spectra, and the calculated adsorption energies and diffusion barriers suggest that the indium transport is controlled by the concentration of defects in the C network and proceeds via hopping of indium adatoms between C vacan...
Defect characterization in Bi12GeO20 single crystals by thermoluminescence
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Bi12GeO20 single crystal grown by Czochralski method was investigated in terms of thermoluminescence (TL) properties. TL experiments were performed for various heating rates between 1 and 6 K/s in the temperature region of 300-675 K. One TL peak with peak maximum temperature of 557 K was observed in the TL spectrum as constant heating rate of 1 K/s was employed. Curve fitting, initial rise and variable heating rate methods were applied to calculate the activation energy of trap level corresponding to this T...
Defect characterization of Ga4Se3S layered single crystals by thermoluminescence
IŞIK, MEHMET; Delice, S.; Hasanlı, Nızamı (2016-04-01)
Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of...
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Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level...
Defect luminescence in undoped p-type GaSe
Aydinli, A; Hasanlı, Nızamı; Goksen, K (Informa UK Limited, 2001-12-01)
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
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N. Hasanlı, “Defect center parameters in β-irradiated MgO nanoparticles,” presented at the The Sixth International Conference on Radiation and Applications in Various Fields of Research (RAD 2018), Ohrid, Makedonya, 2018, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/79248.