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RF MEMS Yapıların Glass Frit ile 0 seviye Paketlenmesi
Date
2008-10-20
Author
Topallı, Kaan
Comart, İlker
Akın, Tayfun
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https://hdl.handle.net/11511/79264
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Packaging of RF MEMS switches and performance improvement
Comart, İlker; Demir, Şimşek; Department of Electrical and Electronics Engineering (2019)
This dissertation presents a novel zero-level packaging method for shunt, capacitive contact RF MEMS switches where BCB acts as the adhesive interlayer between the cap and device wafers. Initially, the packaging concept is realized for 50 Ω CPW transmission lines. A microwave characterization procedure (circuit modeling) is performed by curve fitting five packaged CPW transmission line performances to the proposed circuit model. The circuit model consists of cascaded transmission line segments, in which lumpe...
Beam switching reflectarray with rf mems technology
Bayraktar, Ömer; Aydın Çivi, Hatice Özlem; Department of Electrical and Electronics Engineering (2007)
In this thesis 10x10 reconfigurable reflectarray is designed at 26.5 GHz where the change in the progressive phase shift between elements is obtained with RF MEMS switches in the transmission lines of unit elements composed of aperture coupled microstrip patch antenna (ACMPA). The reflectarray is illuminated by a horn antenna, and the reflected beam is designed to switch between broadside and 40° by considering the position of the horn antenna with respect to the reflectarray. In the design, the transmissio...
Design and fabrication of rf mems switches and instrumentation for performance evaluation
Atasoy, Halil İbrahim; Demir, Şimşek; Department of Electrical and Electronics Engineering (2007)
This thesis presents the RF and mechanical design of a metal-to-metal contact RF MEMS switch. Metal-to-metal contact RF MEMS switches are especially preferred in low frequency bands where capacitive switches suffer from isolation due to the limited reactance. Frequency band of operation of the designed switch is from DC to beyond X-band. Measured insertion loss of the structure is less than 0.2 dB, return loss is better than 30 dB, and isolation is better than 20 dB up to 20 GHz. Isolation is greater than 2...
RF MEMS Kapasitörler ile Rezonans Frekansi Ayarlanabilen Antenler
Erdil, Evren; Topallı, Kaan; Ünlü, Mehmet; Aydın Çivi, Hatice Özlem; Akın, Tayfun (2006-09-06)
Bu bildiride, MEMS teknolojisi ile üretilen rezonans frekansı ayarlanabilir dikdörtgensel yarık ve mikroşerit yama anten yapıları sunulmuştur. İki yapıda da RF MEMS kapasitörler elektrostatik kuvvetle hareketlendirilerek yapıların eşdeğer sığaları değiştirilmiş ve rezonans frekansları ayarlanabilmiştir. Benzetim ve ölçüm sonuçlarına göre her iki yapı için rezonans frekansında 1 GHz’e yakın kaymalar elde edilmiştir.
RF MEMS Tekonolojisi ile Kapasitif ve Metal Metal Baglantili Paralel Anahtar Yapilari
Atasoy, Halil İbrahim; Topallı, Kaan; Ünlü, Mehmet; İstanbulluoğlu, İpek; Engin Ufuk, Temoçin; Ömer, Bayraktar; Demir, Şimşek; Aydın Çivi, Hatice Özlem; Koç, Seyit Sencer; Akın, Tayfun (null; 2006-09-06)
Bu çalışmada, RF MEMS teknolojisiyle üretilen iki adet paralel anahtar yapısı sunulmaktadır. Bunlardan birincisi endüktans uyumlamalı, kapasitif bağlantılı anahtar olup getirdiği yüksek aşağı durum kapasitansı ve endüktansı ile X-bant frekansları içerisinde yüksek yalıtım elde etmeye imkan vermektedir. İkinci tip MEMS anahtar ise metal-metal bağlantılı paralel anahtar olup sağladığı DC bağlantı hem düşük kayıplı anahtarlamaya izin vermekte, hem de köprülerin anahtarlama voltajlarının RF karakteristiği bozul...
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K. Topallı, İ. Comart, and T. Akın, “RF MEMS Yapıların Glass Frit ile 0 seviye Paketlenmesi,” 2008, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/79264.