Growth of Few Layer Single Crystal and Coalesced Graphene Grains on Platinum by Chemical Vapour Deposition

Date

2015-03-13

Author

Karamat, Shumaila
Selda, Sonuşen
Umit, Çelik
Uysallı, Yiğit
Özgönül, Ekin
Oral, Ahmet

Metadata

Show full item record

Item Usage Stats

28
views

0
downloads

URI

https://hdl.handle.net/11511/80629

Collections

Unverified, Conference / Seminar

Suggestions

OpenMETU
Core

Growth of nano-graphene on SrTiO3 (110) substrates by chemical vapour deposition KARAMAT, SHUMAİLA; Celik, K.; Oral, Ahmet (2017-10-01) Transfer of graphene from metal catalyst to dielectrics is a complicated procedure which affects the quality of graphene. In the present work, direct growth of graphene was established on strontium titanate (SrTiO3) substrates with the means of chemical vapour deposition (CVD). The graphene growth on catalyst free dielectric substrates were carried out for 3, 4 and 7 h at 1000 degrees C. Raman spectrum showed D, G and 2D peaks of graphene for the samples. Scanning electron microscope (SEM) was used to get a...
Growth of thick (11(2)over-bar0) GaN using a metal interlayer Tavernier, PR; İmer, Muhsine Bilge; DenBaars, SP; Clarke, DR (AIP Publishing, 2004-11-15) Thick films of (11 (2) over bar0)-oriented GaN have been grown on Ti-coated metal organic chemical vapor deposition templates using hydride vapor phase epitaxy. Significant reductions in crack density were observed enabling 240 mum thick films to be grown on sapphire. The use of Ti interlayers was shown to generate significant fractions of voids at the interlayer regrowth interface facilitating void-assisted separation on cooling. Ti metal layers annealed under optimal conditions were found to produce a TiN...
Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) İmer, Muhsine Bilge; Denbaars , Steven P. (United States Patent and Trademark Office, 2006-5-31) A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AIN) on the annealed...
Growth of branched gold nanoparticles on solid surfaces and their use as surface-enhanced Raman scattering substrates Nalbant Esentürk, Emren; Coskun, S.; Kozanoglu, D.; Ertaş, Gülay; Ünalan, Hüsnü Emrah; Nalbant Esentürk, Emren (2015-01-01) Branched gold (Au) nanoparticles (NPs) were synthesized directly on surfaces of three different supports (silicon, glass, indium tin oxide (ITO)) by following a "seed-mediated" method. Growth of the nanostructures in high yield and all with branched morphology was achieved on all surfaces. Nanostructures with desired characteristics were synthesized by determining the optimum seed size (8 nm Au nanospheres) and pH (3.00) of the growth solution. The Au NPs synthesized under these conditions have branched mor...
Growth of microalgae Chlorella vulgaris at the photobioreactor for biodiesel production Ertürk, Handan; Sudagıdan, Mert; Yurdakul, Merve; Öktem, Hüseyin Avni (2018-03-01) Microalga is known to have higher lipid contents and biodiesel efficiency than most plant oil sources e.g. palm oil. We studied the growth of Chlorella vulgaris at the photobioreactor in our laboratory. We aimed to use this photobioreactor of laboratory scale as feed stream to an open pond larger scale bioreactor for future work. Photobioreactor had three compartments which had separate controls for light and air circulation. Temperature was kept at 22°C-26°C. The circulation rate was 180 L/h. The light int...

Citation Formats

S. Karamat, S. Selda, Ç. Umit, Y. Uysallı, E. Özgönül, and A. Oral, “Growth of Few Layer Single Crystal and Coalesced Graphene Grains on Platinum by Chemical Vapour Deposition,” 2015, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/80629.