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Effect Of Ti Addıtıon On Cyclic Oxıdatıon Behavıor Of Feal Intermetallics
Date
2016-10-07
Author
Yıldırım, Mehmet
Akdeniz, Mahmut Vedat
Mehrabov, Amdulla
Metadata
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URI
http://korsem16.bayburt.edu.tr/belgeler/Bildiri_kitabi.pdf
https://hdl.handle.net/11511/80723
Conference Name
XIV. International Corrosion Symposium (KORSEM 2016), 5 - 07 Ekim 2016
Collections
Unverified, Conference / Seminar
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EFFECT OF Ti ADDITION ON CYCLIC OXIDATIONBEHAVIOR OF FeAl INTERMETALLICS
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Effect of Implanted Phosphorus Profile on iVoc Variations During Firing Process of n-type Silicon
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Electrical activation of implanted phosphorus can be carried out simultaneously with boron dopants at high temperatures or separately at lower temperatures. In this study, we investigate the effect of high and low-temperature annealing processes for dopant activation following the phosphorous implantation process in n-type c-Si. Symmetrically implanted wafers are activated at 875 °C (low temperature) and 1050 °C (high temperature) and subsequently coated with PEC VD SiNx:H. iVoc values of the samples activa...
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M. Yıldırım, M. V. Akdeniz, and A. Mehrabov, “Effect Of Ti Addıtıon On Cyclic Oxıdatıon Behavıor Of Feal Intermetallics,” Bayburt, Türkiye, 2016, p. 295, Accessed: 00, 2021. [Online]. Available: http://korsem16.bayburt.edu.tr/belgeler/Bildiri_kitabi.pdf.