OPTICAL PHONONS IN LAYER CRYSTALS OF TlGaS2, beta -TlInS2, AND TlGaSe2.

Date

1977-01-01

Author

Mavrin, B.n.
Sterin, Kh.e.
Hasanlı, Nızamı
Khalafov, Z.d.
Salaev, E.yu.
Allakhverdiev, K.r.
Sardarly, R.m.

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URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0017542405&origin=inward
https://hdl.handle.net/11511/81217

Journal

Sov Phys Solid State

Collections

Department of Physics, Article

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OPTICAL PHONONS AND STRUCTURE OF TLGAS2, TLGASE2, AND TLINS2 LAYER SINGLE-CRYSTALS Hasanlı, Nızamı; MELNIK, NN; RAGIMOV, AS; TAGIROV, VI (Wiley, 1983-01-01)
Optical phonons in layerd TLGAS2, beta-TLINS2 and TLGASE2 crystals MAVRIN, BN; STERIN, KE; Hasanlı, Nızamı; KHALADOV, ZR; SALAEV, EY; ALLAKHVERDIEV, KR; SARDALY, RM (1977-01-01)
Optical phonons in TlGaS2 Khalafov, Z.D.; Hasanlı, Nızamı; Sardaly, P.M. (Springer Science and Business Media LLC, 1977-02-01)
Optical phonons in layer TIInSe2 single crystals Hasanlı, Nızamı; Dzhavadov, B.M.; Melnik, N.N.; Tagirov, V.I.; Vinogradov, E.A. (Wiley, 1979-01-01)
Optical properties of Tl2In2Se3S layered single crystals Güler, Işıkhan; Hasanlı, Nızamı (2010-01-01) The optical properties of Tl2In2Se3S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dis...

Citation Formats

B. n. Mavrin et al., “OPTICAL PHONONS IN LAYER CRYSTALS OF TlGaS2, beta -TlInS2, AND TlGaSe2.,” Sov Phys Solid State, pp. 1734–1736, 1977, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0017542405&origin=inward.