The Effect of Substrate Temperature on CdZnTe thin films

Doğru, Çiğdem
Terlemezoğlu, Makbule
Bayraklı, Özge
Güllü, Hasan Hüseyin
Parlak, Mehmet


The effect of Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by solution deposition
Kayasu, Volkan; Özenbaş, Ahmet Macit (2009-04-01)
Niobium (Nb)-doped lead zirconate titanate thin films (PNZT) were produced by solution deposition with nominal compositions, Pb(1-0.5x)(Zr0.53Ti0.47)(1-x)NbxO3 where x = 0.00-0.07. The effects of sintering temperature, sintering time, variation of thickness in the films and change of niobium content were investigated with regard to phase development, microstructure, and ferroelectric and dielectric characteristics. The best results were obtained in double-layered films (390 nm) sintered at 600 degrees C for...
The effect of annealing conditions on the red photoluminescence of nanocrystalline Si/SiO 2 films
Wu, Xiaochun; Bek, Alpan; Bittner, Alexander M.; Eggs, Ch.; Ossadnik, Ch.; VEPREK, S (Elsevier BV, 2003-02-03)
Nanocrystalline Si (nc-Si) embedded in a SiO2 matrix, fabricated by plasma CVD and a subsequent post-treatment shows a broad red photoluminescence (PL). In this paper, the effects of annealing temperature, atmosphere and time on the red PL from 1.75 to 1.5 eV have been investigated in detail. It is found that the spectral shift and the PL intensity from 1.75 to 1.5 eV show a strong and unique dependence on annealing conditions. For a PL approximately 1.75 eV, upon 400 °C forming gas annealing, the spectral ...
The Effects of Substrate and Annealing Temperatures on Surface Morphology of Sputtered SnSe Thin Films
Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Bayraklı, Özge; Parlak, Mehmet (2017-05-26)
The effect of substrate and post annealing temperature on the electrical properties of polycrystalline InSe thin films
Parlak, Mehmet (1999-06-01)
The correlation between the electrical properties of vacuum evaporated InSe thin films and the growth conditions as well as post depositional annealing has been investigated. The electrical properties of the deposited films have been studied in the temperature range of 50-320 K. The donor levels present in the InSe films have been analysed by applying the single donor-single acceptor model to the electrical data.
the effect of oxygenation on the ferroelectric performances of bismuth ferrite thin films
Kocaoğlu, Bahadır Can; Özenbaş, Ahmet Macit (null; 2017-11-26)
Citation Formats
Ç. Doğru, M. Terlemezoğlu, Ö. Bayraklı, H. H. Güllü, and M. Parlak, “The Effect of Substrate Temperature on CdZnTe thin films,” 2018, Accessed: 00, 2021. [Online]. Available: