Material and Device Characterization of Cu0 5Ag0 5InSe2 and ZnInSe2 Thin Films for Photovoltaic Applications

Date

2015-04-10

Author

Güllü, Hasan Hüseyin
Coşkun, Emre
Bayraklı, Özge
Parlak, Mehmet

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https://hdl.handle.net/11511/85950

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Material and device characterization of ZnİnSe2 and Cu0.5Ag0.5İnSe2 thin films for photovoltaic applications Güllü, Hasan Hüseyin; Parlak, Mehmet; Erçelebi, Ayşe Çiğdem; Department of Physics (2016) In this work, material and device characterization of n-type ZnInSe2 (ZIS) and p-type Cu0.5Ag0.5InSe2 (CAIS) polycrystalline thin films were investigated under the aim of possible photovoltaic applications. ZIS polycrystalline structure is a ternary chalcopyrite semiconductor belongs to the group of II-III-VI compounds with the interest of II-VI binary analog of ZnSe structure. Similar to its binary analogs, it has a high band gap value, however low resistivity values compared to ZnSe structure, so that it ...
Material and Si-based diode analyses of sputtered ZnTe thin films Güllü, Hasan Hüseyin; Surucu, O. Bayrakli; Isik, M.; Terlemezoglu, M.; Parlak, M. (Springer Science and Business Media LLC, 2020-07-01) Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was o...
Material Characterization of Amorphous Molybdenum Oxide Thin Films Güllü, Hasan Hüseyin; Bayraklı, Özge; Terlemezoğlu, Makbule; Parlak, Mehmet (null; 2018-06-17)
Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode Gullu, H. H.; Isik, M.; Delice, S.; Parlak, Mehmet; Hasanlı, Nızamı (Springer Science and Business Media LLC, 2020-01-01) Cu0.5Ag0.5InSe2 (CAIS) thin films were deposited on a glass substrate by sequential sputtering of Cu, Ag, and In2Se3-stacked film layers. Structural characterization showed that the deposited CAIS film satisfies nearly the stoichiometric form with uniform and homogeneous surface structure. The single-phase polycrystalline behavior without any secondary-phase formation was observed from the diffraction profile. The optical properties were investigated using temperature-dependent transmission measurements in ...
Material Performance of Co3O4 CeO2 and Co Ce Mixed Oxide on Oxygen Storage for Solar Thermal Hydrogen Production Çalışan, Atalay; Kaya, Denız; Üner, Deniz (null; 2015-08-30)

Citation Formats

H. H. Güllü, E. Coşkun, Ö. Bayraklı, and M. Parlak, “Material and Device Characterization of Cu0 5Ag0 5InSe2 and ZnInSe2 Thin Films for Photovoltaic Applications,” 2015, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/85950.