Growth and characterization of Ge thin films

Download
068602.pdf
1997
Qasrawi, Atef Fayez
Show full item record
43
views
0
downloads
https://hdl.handle.net/11511/9091
Graduate School of Natural and Applied Sciences, Thesis

Suggestions

Growth and characterization of polycrystalline InSe thin films
Parlak, Mehmet; Günal, İbrahim; ALLAKHVERDIEV, KERİM (1995-03-15)
Indium selenide films were obtained by the thermal evaporation of undoped crystals at substrate temperatures of 210 and 300 IC. Films were found to exhibit n-type conductivity. Scanning electron microscopy established that the films grown on glass substrates held at 210 degrees C had an atomic content of In46.66Se53.34, whereas the films obtained under the same conditions and annealed in vacuum at 150 degrees C had an atomic content of In48.13Se51.87. X-Ray diffraction indicated that the films were polycrys...
Growth and characterization of thermol SİO2 thin films
Çelik, Meral; Katırcıoğlu, Bayram; Department of Physics (1987)
Growth and characterization of InSe single crystals
Deniz, Derya; Akınoğlu, Bülent Gültekin; Department of Physics (2004)
In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the elect...
Growth and characterization of indium rich indium-gallium-nitride solar cell epitaxial structures by metal organic chemical vapor deposition
Çakmak, Hüseyin; Ünalan, Hüsnü Emrah; Turan, Raşit; Department of Micro and Nanotechnology (2012)
The purpose of this study is to develop a technology for indium (In) rich indium gallium nitride (InGaN) solar cell epitaxial structures through metal organic chemical vapor deposition (MOCVD) method. InxGa1-xN solar cell structures have potential to cover 90% of the solar spectrum by varying In composition in the active region of the solar cell, where bandgaps of indium nitride (InN) and gallium nitride (GaN) are 0.7 eV and 3.4 eV, respectively. Photovoltaic devices that have a bandgap larger than 2.0 eV g...
Growth, electrical and structural characterization of beta-GaSe thin films
Parlak, Mehmet; Ercelebi, C (Springer Science and Business Media LLC, 2003-04-01)
GaSe thin films were deposited onto the glass substrates kept at 200degrees and 300degreesC by the thermal evaporation of GaSe crystals under the pressure of 10(-5) Torr. X-ray analysis of the films revealed that films grown at 200. C are amorphous in nature while the films grown at 300degreesC are polycrystalline beta-GaSe. The temperature dependent electrical conductivity measurements in the region of 320-100 K for the films grown at 300degreesC showed that the transport mechanisms are the thermionic emis...
Citation Formats
A. F. Qasrawi, “Growth and characterization of Ge thin films,” Middle East Technical University, 1997.
METU IIS - Integrated Information Service open@metu.edu.tr