Pulsed Infrared Laser Crystallization Mechanism of Amorphous Silicon Thin-Films

Korkut, Ceren
Bek, Alpan
Laser crystallization of amorphous silicon layers is an active research field in photonic applications. In literature, typically single laser pulses are used to examine the absorption mediated crystallization of amorphous silicon. Here, the slow quenching regime dynamics for laser crystallization with highly overlapping infrared nanosecond pulses was examined experimentally and theoretically. In contrast to commonly used >10 micrometer thick layers oñ 700°C heated substrates, in our study, the thicknesses of deposited amorphous Si layers were decreased down to 1 micrometer range, and the laser crystallization was performed at room temperature. Increasing the use of Si in thin-film transistors and photovoltaic applications drive researchers to find cost-effective and efficient ways of manufacturing crystalline Si films on various types of substrates. Understanding the mechanism of the laser crystallization process of Si films by pulsed lasers becomes crucial. This work reveals the laser crystallization mechanism of Si thin films in macroscopic scales by considering heat transfer and accumulation dynamics. Our motivation is to describe the dynamics of the laser crystallization of Si films to provide a complimentary guide to produce device-grade crystal Si films by infrared pulsed laser without employing preheated substrates.
Citation Formats
C. Korkut, K. ÇINAR, and A. Bek, “Pulsed Infrared Laser Crystallization Mechanism of Amorphous Silicon Thin-Films,” presented at the i-SAMN 2020 International Symposium on Advanced Materials and Nanotechnology, 2020, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/91625.