A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures

Date

2022-01-01

Author

Şahin, Alper
Gül, Musa Selim
Uzgur, Fatih
Kocaman, Serdar

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In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 mu m and 2.5 mu m. InP based epilayer design consists of a compositionally graded quaternery InAlGaAs barrier region sandwiched between lattice matched InGaAs absorber and extended InGaAs absorber. In this study, we also provide a comparison between suggested nBn structure and a relatively usual npn InGaAs structure, using the same computational environment.

Subject Keywords

Infrared, Photodetector, nBn, InGaAs, SWIR, extended SWIR, SHORT-WAVE, RECOMBINATION, HGCDTE

URI

https://hdl.handle.net/11511/99329

DOI

https://doi.org/10.1117/12.2610186

Conference Name

Conference on Quantum Sensing and Nano Electronics and Photonics XVIII Part of SPIE Photonics West OPTO Conference

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

A. Şahin, M. S. Gül, F. Uzgur, and S. Kocaman, “A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures,” ELECTR NETWORK, 2022, vol. 12009, Accessed: 00, 2022. [Online]. Available: https://hdl.handle.net/11511/99329.