Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices
Toppare, Levent Kamil
MetadataShow full item record
In this study three different organic semiconductors were used in the fabrication of ITO/ PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (J(r)-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the J(r)-V plot behaviors are given by linear dependence between In (J(r)) and V-1/(2), where J(r) is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current.