On the passivation performance of SiNx, SiOxNy and their stack on c-Si wafers for solar cell applications: Correlation with optical, chemical and interface properties

Date

2023-07-01

Author

Canar, Hasan Hüseyin
Bektaş, Gence
Turan, Raşit

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SiNx and SiOxNy layers deposited by the PECVD method are commonly used in silicon solar cells for theirexcellent thin film properties. In this study, we perform an experimental analysis of the optical, chemical andelectrical properties of these films prepared under different process conditions. The C–V measurements for theinterface analysis reveal that SiOxNy layers for any refractive index have lower interface state density and fixedcharge density than SiNx layers. Additionally, our calculations on the FTIR spectra indicate that SiNx, whencompared with SiOxNy, has a significantly higher hydrogen amount which is important in reducing the interfacetraps. Furthermore, we explain the passivation results obtained from PCD measurement for single SiNx, singleSiOxNy and their stack layers on p-type and n-type Si wafers by C–V and FTIR measurements. Our results suggestthat depositing a very thin SiOxNy having low Dit beneath SiNx having high Qf and H amount provides superiorpassivation on p and n-type Si wafers, which is improved further by a subsequent fast-firing process.

URI

https://www.sciencedirect.com/science/article/pii/S0927024823001770?via%3Dihub
https://hdl.handle.net/11511/103347

Collections

Department of Physics, Article