Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Excitation wavelength dependent nonlinear absorption mechanisms and optical limiting properties of Bi12SiO20 single crystal
Date
2023-06-01
Author
Doğan, Anıl
KARATAY, AHMET
Isık, Mehmet
PEPE, YASEMİN
Hasanlı, Nızamı
ELMALI, AYHAN
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
63
views
0
downloads
Cite This
Nonlinear absorption mechanisms (NA), excitation wavelength dependence, and defect states of Bi12SiO20 (BSO) single crystal were investigated. The band gap and Urbach energies were found to be 2.51 and 0.4 eV from the absorption spectra. To evaluate the effect of excitation energy on the NA mechanism of the BSO single crystal, open aperture Z-scan experiment with 4 ns laser pulse at 532 and 1064 nm wavelengths with different intensities was performed. Obtained data were analyzed with a theoretical model considering the contributions of one photon absorption (OPA), two photon absorption (TPA) and free carrier absorption (FCA) to NA. The results indicated that the NA behavior decreased with increasing of the pump intensity as the defect states at around 2.32 eV by OPA at 532 nm, and TPA at 1064 nm excitations. The dominant NA mechanisms are OPA and sequential TPA at 532 nm as compared to the 1064 nm. A higher NA coefficient was obtained at 532 nm as compared to 1064 nm excitation. This observation was attributed to higher contribution of OPA at 532 nm even at lower input intensities compared to TPA contribution at 1064 nm. Onset optical limiting thresholds were found as 0.34 and 0.68 mJ/cm2 for 532 and 1064 nm input beams, respectively. In the light of the results, the BSO single crystal may be used as a saturable absorber or an optical limiter at convenient input intensity by effectively adjusting defect states and excitation wavelength.
Subject Keywords
Bi12SiO20 crystal
,
Defect states
,
Nonlinear absorption
,
Optical limiting
URI
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85159552139&origin=inward
https://hdl.handle.net/11511/103411
Journal
Optical Materials
DOI
https://doi.org/10.1016/j.optmat.2023.113882
Collections
Department of Physics, Article
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
A. Doğan, A. KARATAY, M. Isık, Y. PEPE, N. Hasanlı, and A. ELMALI, “Excitation wavelength dependent nonlinear absorption mechanisms and optical limiting properties of Bi12SiO20 single crystal,”
Optical Materials
, vol. 140, pp. 0–0, 2023, Accessed: 00, 2023. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85159552139&origin=inward.