Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes

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Date

2013-03-01

Author

Tansel, Tunay
Kutluer, Kutlu
Muti, Abdullah
Salihoglu, Omer
Aydinli, Atila
Turan, Raşit

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The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation energies below 60 meV and is inversely proportional to the reverse bias. In order to satisfactorily explain the experimental data, we hereby propose the existence of a surface recombination noise that is a function of both the frequency and bias. The calculated noise characteristics indeed show good agreement with the experimental data. (C) 2013 The Japan Society of Applied Physics

Subject Keywords

Passivation, Devices

URI

https://hdl.handle.net/11511/32856

Journal

APPLIED PHYSICS EXPRESS

DOI

https://doi.org/10.7567/apex.6.032202

Collections

Department of Physics, Article

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Citation Formats

T. Tansel, K. Kutluer, A. Muti, O. Salihoglu, A. Aydinli, and R. Turan, “Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes,” APPLIED PHYSICS EXPRESS, pp. 0–0, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32856.