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Effect of temperature rise on the growth rate of anodic SiO2

1988-12
Katırcıoğlu, Bayram
Atılgan, İsmail
Different aspects of silicon anodization are discussed. First, concerning the controversy of mobile ions during the anodic oxide growth, the inward motion of the anion is thought the most probable alternative and then a growth mechanism based on the diffusion of hydroxyl ion from the electrolyte to the oxide-silicon interface is established. The growth rate, apparently complex, is interpreted in the light of this model by introducing and justifying a temperature rise during anodization