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Effect of temperature rise on the growth rate of anodic SiO2
Date
1988-12
Author
Katırcıoğlu, Bayram
Atılgan, İsmail
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Different aspects of silicon anodization are discussed. First, concerning the controversy of mobile ions during the anodic oxide growth, the inward motion of the anion is thought the most probable alternative and then a growth mechanism based on the diffusion of hydroxyl ion from the electrolyte to the oxide-silicon interface is established. The growth rate, apparently complex, is interpreted in the light of this model by introducing and justifying a temperature rise during anodization
URI
https://hdl.handle.net/11511/51774
Journal
Thin Solid Films
DOI
https://doi.org/10.1016/0040-6090(88)90489-0
Collections
Department of Physics, Article
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B. Katırcıoğlu and İ. Atılgan, “Effect of temperature rise on the growth rate of anodic SiO2,”
Thin Solid Films
, pp. 129–140, 1988, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/51774.