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Ab initio study of the adsorption and desorption of Se on the Si(001) surface
Date
2002-06-01
Author
Cakmak, M
Srivastava, GP
Ellialtıoğlu, Süleyman Şinasi
Colakoglu, K
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The adsorption and desorption of Se on the Si(0 0 1) surface are investigated, based upon the ab initio pseudopotential calculations. Following a recent experimental work, three different adsorption models have been studied: 1/2 NIL of Se on the Si-Si dimer with a bridge position within the (1 x 2) surface reconstruction, 1 ML of Se sitting above the topmost Si atoms in bridge absorption site within the (1 x 1) surface reconstruction, and 2 M L of Se half of which is embedded into the Si bulk near the surface within the (1 x 1) surface reconstruct ion. For 1/2 ML, we have found that the vertical displacement between the Se atom and Si-Si dimer is 1.97 Angstrom, close to the experimentally measured value of 2.10 Angstrom. For I ML, the vertical displacement between the Se atom and the Si atoms is 1.41 Angstrom, somewhat smaller than the experimentally measured value of 1.60 Angstrom, For 2 ML, upon relaxation, the embedded Se atoms have diffused upwards. Our results are analysed to provide support to a recent experimental study of desorption of Se from the surface.
Subject Keywords
Density functional calculations
,
Silicon
,
Chalcogens
,
Low index single crystal surfaces
URI
https://hdl.handle.net/11511/57479
Journal
SURFACE SCIENCE
DOI
https://doi.org/10.1016/s0039-6028(02)01170-6
Collections
Graduate School of Natural and Applied Sciences, Article
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M. Cakmak, G. Srivastava, S. Ş. Ellialtıoğlu, and K. Colakoglu, “Ab initio study of the adsorption and desorption of Se on the Si(001) surface,”
SURFACE SCIENCE
, pp. 29–33, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/57479.