Particle penetration in Kane type semiconductor quantum dots

2009-11-01
Hashimzade, F. M.
Babayev, A. M.
Tez, S.
In the present paper the effect of the resonant tunnelling of the electrons in spherical quantum dots of A(3)B(5)-type semiconductors is studied in the framework of three-band Kane model. An analytical expression for the coefficient of transmission has been found. It has been shown that non-zero transmission and resonant peaks are observed for electrons with energy below the height of the potential barrier. The numerical results are given for the spherical heterostructure of InAs/GaAs.

Citation Formats
F. M. Hashimzade, A. M. Babayev, and S. Tez, “Particle penetration in Kane type semiconductor quantum dots,” EUROPEAN PHYSICAL JOURNAL B, vol. 72, no. 1, pp. 127–131, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67258.