Particle penetration in Kane type semiconductor quantum dots

Date

2009-11-01

Author

Hashimzade, F. M.
Babayev, A. M.
Tez, S.

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In the present paper the effect of the resonant tunnelling of the electrons in spherical quantum dots of A(3)B(5)-type semiconductors is studied in the framework of three-band Kane model. An analytical expression for the coefficient of transmission has been found. It has been shown that non-zero transmission and resonant peaks are observed for electrons with energy below the height of the potential barrier. The numerical results are given for the spherical heterostructure of InAs/GaAs.

Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/67258

Journal

EUROPEAN PHYSICAL JOURNAL B

DOI

https://doi.org/10.1140/epjb/e2009-00326-9

Collections

Department of Physics, Article

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Citation Formats

F. M. Hashimzade, A. M. Babayev, and S. Tez, “Particle penetration in Kane type semiconductor quantum dots,” EUROPEAN PHYSICAL JOURNAL B, pp. 127–131, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67258.