Particle penetration in Kane type semiconductor quantum dots

Hashimzade, F. M.
Babayev, A. M.
Tez, S.
In the present paper the effect of the resonant tunnelling of the electrons in spherical quantum dots of A(3)B(5)-type semiconductors is studied in the framework of three-band Kane model. An analytical expression for the coefficient of transmission has been found. It has been shown that non-zero transmission and resonant peaks are observed for electrons with energy below the height of the potential barrier. The numerical results are given for the spherical heterostructure of InAs/GaAs.


ILAIWI, KF; Tomak, Mehmet (Wiley, 1991-08-01)
The polarization of a quantum electron confined in square, parabolic, and triangular quantum wells is calculated numerically. The aim of the present calculations is to compare the results for various geometries.
Theoretical investigation of intersubband nonlinear optical rectification in AlxlGa1-xlAs/GaAs/AlxrGa1-xrAs asymmetric rectangular quantum wells
Karabulut, Ibrahim; Atav, Uelfet; Safak, Haluk; Tomak, Mehmet (Wiley, 2007-09-01)
In this study, a theoretical investigation of intersubband nonlinear optical rectification in Alx1Ga1-x1As/ GaAs/AlxrGa1-xrAs asymmetric rectangular quantum wells is presented. The electronic states in the asymmetric rectangular quantum well are described within the framework of the envelope function approach including the effects of band nonparabolicity and the effective mass mismatch. The nonlinear optical rectification is calculated using the density matrix formalism. It is found that the nonlinear optic...
Electronic structure of a many-electron spherical quantum dot with an impurity
Sahin, M; Tomak, Mehmet (American Physical Society (APS), 2005-09-01)
We investigate the electronic structure of a many-electron spherical quantum dot with and without hydrogenic impurity. The number of electrons is taken as N=18. The density functional theory is used within local density approximation. Total energy, chemical potential, addition energy spectra, and the shell structure are determined and the results obtained are compared for cases with and without impurity. It is observed that the capacitive energy with the impurity increases in the 1s shell with respect to th...
Nonlinear intersubband optical absorption of Si delta-doped GaAs under an electric field
Yildirim, Hasan; Tomak, Mehmet (Wiley, 2006-10-01)
We study the nonlinear intersubband optical absorption of a single Si delta-doped GaAs sheet placed in the middle of a GaAs quantum well and subjected to an electric field. The Schrodinger and Poisson equations are solved self-consistently for various electric field strengths. The self-consistent solutions provide us with the correct confining potential, the wave functions, the corresponding subband energies and the subband occupations. The nonlinear optical intersubband absorption spectra are discussed wit...
Effect of B2O3 addition on the formation and properties of Tl-2212 and Tl-2223 superconductors
Cavdar, S; Aksu, E; Koralay, H; Ozkan, H; Hasanlı, Nızamı; Ercan, I (Wiley, 2003-09-01)
We have studied the effect of B2O3 addition on the formation and properties of the Tl-based superconductors. Polycrystalline Tl-2212 and Tl-2223 samples were synthesized by adding B2O3 to the chemicals at the first and at the second stage of two stages sintering processes (3+1 h) at 860 C. X-ray powder diffraction patterns, resistance versus temperature behaviours and the micrographs of the B2O3 free and B2O3 added samples have been analysed. The compositions and the critical temperatures of the samples ind...
Citation Formats
F. M. Hashimzade, A. M. Babayev, and S. Tez, “Particle penetration in Kane type semiconductor quantum dots,” EUROPEAN PHYSICAL JOURNAL B, pp. 127–131, 2009, Accessed: 00, 2020. [Online]. Available: