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Particle penetration in Kane type semiconductor quantum dots

2009-11-01
Hashimzade, F. M.
Babayev, A. M.
Tez, S.
In the present paper the effect of the resonant tunnelling of the electrons in spherical quantum dots of A(3)B(5)-type semiconductors is studied in the framework of three-band Kane model. An analytical expression for the coefficient of transmission has been found. It has been shown that non-zero transmission and resonant peaks are observed for electrons with energy below the height of the potential barrier. The numerical results are given for the spherical heterostructure of InAs/GaAs.