Diamond Power Electronics: From 1kV towards 10kV Breakdown Voltage

Date

2022-01-01

Author

Han, Z.
Lee, H.-P.
Bayram, Barış
Bayram, C.

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This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

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The rapidly growing demand for power electronics to rout, control, and convert electrical power motivates recent research into devices based on ultra-wide-bandgaps semiconductors. Diamond-based semiconductor devices have drawn increasing attention in high-power applications due to diamond's extraordinary electrical and physical properties. It has a 5.5 eV band gap and over 7.7MV cm-1 breakdown field. Diamond is also one of the best thermal conductors with thermal conductivity over 2200 Wm-1k-1, making it an ideal material for high power applications where heat dissipation is challenging [1]. To demonstrate diamond's advantages in power electronics, diamond power diodes and transistors are fabricated with breakdown voltages much higher than devices based on other wide band-gap materials.

Subject Keywords

Diamond, Metal semiconductor field effect transistors, Schottky barrier diodes

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85142632000&origin=inward
https://hdl.handle.net/11511/101608

DOI

https://doi.org/10.1109/csw55288.2022.9930383

Conference Name

2022 Compound Semiconductor Week, CSW 2022

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

Z. Han, H.-P. Lee, B. Bayram, and C. Bayram, “Diamond Power Electronics: From 1kV towards 10kV Breakdown Voltage,” presented at the 2022 Compound Semiconductor Week, CSW 2022, Michigan, Amerika Birleşik Devletleri, 2022, Accessed: 00, 2023. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85142632000&origin=inward.