Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
An analytical method for the accurate and effective thermal modelling of AIGaN/GaN HEMTS
Download
index.pdf
Date
2017
Author
Mohammad, Azarifar
Metadata
Show full item record
Item Usage Stats
278
views
156
downloads
Cite This
AlGaN/GaN high electron mobility transistors (HEMTs) are popular solid-state electronic devices used for high power and frequency applications. Concerns exist about their reliability and performance due to harsh self-heating effects, which makes it necessary to correctly characterize their thermal performance. In the past many researchers used thermal modelling approaches for thermal characterization since variety of limiting factors still exist in the experimental measurements. In this study diversities and important parameters in various thermal models are investigated to provide a roadmap for the future thermal models. In addition, an analytical solution technique with high efficiency and accuracy is introduced for the correction of 2D models and for fast parametric thermal studies of HEMT devices. Using this analytical technique comprehensive thermal performance comparison of GaN-on-SiC and GaN-on-diamond for various device geometries and operating conditions is also performed.
Subject Keywords
Modulation-doped field-effect transistors.
,
Semiconductors
,
Field-effect transistors.
,
Solid state electronics.
URI
http://etd.lib.metu.edu.tr/upload/12620718/index.pdf
https://hdl.handle.net/11511/26257
Collections
Graduate School of Natural and Applied Sciences, Thesis
Suggestions
OpenMETU
Core
A development tool for design and analysis of MEMS based EM energy scavengers
Turkyilmaz, Serol; Külah, Haluk; Muhtaroglu, Ali (2010-12-01)
This paper presents a development tool for estimating the performance of an electromagnetic (EM) vibration-to-electrical MEMS energy scavenger for low power mobile computing and wireless sensor applications. The tool takes design and excitation parameters as input, and estimates output voltage waveforms and power levels. It has been correlated against validation data, and used for early evaluation and design of new MEMS modules, which could not be optimized using off-the-shelf design packages. The tool was ...
Electrothermal Analysis of the Field-Plated AIGaN/GaN HEMTs with SiO2 Passivation
Kara, Dogacan; AKGÜN, FATMA NAZLI DÖNMEZER (2017-09-01)
AlGaN/GaN high electron mobility transistors (HEMTs) are widely used in high frequency and power applications of the space and military industries due to their high RF power densities. When operated in full capacity, reliability of GaN HEMTs drop significantly due to device degradation, electron collapse phenomena, and concentrated heating effects. Although significant research has been done to investigate the effects of passivation, field-plates on the device degradation and the electron collapse separatel...
High performance readout electronics for uncooled infrared detector arrays
Yıldırım, Ömer Özgür; Akın, Tayfun; Department of Electrical and Electronics Engineering (2006)
This thesis reports the development of high performance readout electronics for resistive microbolometer detector arrays that are used for uncooled infrared imaging. Three different readout chips are designed and fabricated by using a standard 0.6 m CMOS process. Fabricated chips include a conventional capacitive transimpedance amplifier (CTIA) type readout circuit, a novel readout circuit with dynamic resistance nonuniformity compensation capability, and a new improved version of the CTIA circuit. The fabr...
Analysis and design of passive microwave and optical devices using the multimode interference technique
Sunay, Ahmet Sertaç; Birand, Mehmet Tuncay; Department of Electrical and Electronics Engineering (2005)
The Multimode Interference (MMI) mechanism is a powerful toool used in the analysis and design of a certain class of optical, microwave and millimeter wave devices. The principles of the MMI method and the self-imaging principle is described. Using this method, NXM MMI couplers, MMI splitter/combiners are analyzed. Computer simulations for illustrating the "Multimode Interference Mechanism" are carried out. The MMI approach is used to analyze overmoded 'rectangular metallic' and 'dielectric slab' type of wa...
A Self-Powered and Efficient Rectifier for Electromagnetic Energy Harvesters
Ulusan, Hasan; Zorlu, Ozge; Muhtaroglu, Ali; Külah, Haluk (2014-11-05)
This paper presents an interface circuit for efficient rectification of voltages from electromagnetic (EM) energy harvesters operating with very low vibration frequencies. The interface utilizes a dual-rail AC/DC doubler which benefits from the full cycle of the input AC voltage, and minimizes the forward bias voltage drop with an active diode structure. The active diodes are powered through an AC/DC quadrupler with diode connected (passive) transistors. The interface system has been validated to drive 22 m...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
A. Mohammad, “An analytical method for the accurate and effective thermal modelling of AIGaN/GaN HEMTS,” M.S. - Master of Science, Middle East Technical University, 2017.