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An analytical method for the accurate and effective thermal modelling of AIGaN/GaN HEMTS
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Date
2017
Author
Mohammad, Azarifar
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AlGaN/GaN high electron mobility transistors (HEMTs) are popular solid-state electronic devices used for high power and frequency applications. Concerns exist about their reliability and performance due to harsh self-heating effects, which makes it necessary to correctly characterize their thermal performance. In the past many researchers used thermal modelling approaches for thermal characterization since variety of limiting factors still exist in the experimental measurements. In this study diversities and important parameters in various thermal models are investigated to provide a roadmap for the future thermal models. In addition, an analytical solution technique with high efficiency and accuracy is introduced for the correction of 2D models and for fast parametric thermal studies of HEMT devices. Using this analytical technique comprehensive thermal performance comparison of GaN-on-SiC and GaN-on-diamond for various device geometries and operating conditions is also performed.
Subject Keywords
Modulation-doped field-effect transistors.
,
Semiconductors
,
Field-effect transistors.
,
Solid state electronics.
URI
http://etd.lib.metu.edu.tr/upload/12620718/index.pdf
https://hdl.handle.net/11511/26257
Collections
Graduate School of Natural and Applied Sciences, Thesis
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A. Mohammad, “An analytical method for the accurate and effective thermal modelling of AIGaN/GaN HEMTS,” M.S. - Master of Science, Middle East Technical University, 2017.
