Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Identification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy
Date
2024-10-01
Author
Isik, M.
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
12
views
0
downloads
Cite This
Identification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10–280 K to explore trap centers in InSe crystal—a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the Tstop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices.
Subject Keywords
2D materials
,
Defects
,
InSe
,
Optoelectronic devices
,
Thermoluminescence
,
TSC
URI
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85202301614&origin=inward
https://hdl.handle.net/11511/111186
Journal
Optical Materials
DOI
https://doi.org/10.1016/j.optmat.2024.116011
Collections
Department of Physics, Article
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. Isik and N. Hasanlı, “Identification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy,”
Optical Materials
, vol. 156, pp. 0–0, 2024, Accessed: 00, 2024. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85202301614&origin=inward.