Mathematical modeling of response dynamics of n-type SnO2-based thick film gas sensor

Date

2025-05-01

Author

Atman, Berkan
Karakaş, Gürkan
Uludağ, Yusuf

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The sensing mechanism of semiconductor metal oxide (SMOX) gas sensors has a complex nature due to the physical and chemical phenomena involved. In this study, a comprehensive transient mathematical model was developed considering mass transfer, detailed surface reactions, electron transfer, and DC electric current flow between electrodes. The model was tested for the response of n-type SnO2 thick film sensors to CO gas in a dry-air environment. The results provide critical insights into the effects of crucial parameters like operating temperature, film thickness, and pore size on the two main competing mechanisms: the relative rates of surface reduction/oxidation and the rates of diffusion and surface reaction of CO. The simulation results were compared with the experimental response profiles of 7 μm thick SnO2 film for three different step pulses of magnitudes of 400 ppm, 800 ppm, and 1500 ppm CO concentrations under a continuous flow of dry air at T = 528K.

Subject Keywords

CO, Ionized oxygen, Modeling, Semiconductor gas sensor, Tin oxide

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85216654707&origin=inward
https://hdl.handle.net/11511/113670

Collections

Department of Chemical Engineering, Article