Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors

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2012-4

Author

Salihoglu, Omer
Muti, Abdullah
Kutluer, Kutlu
Tansel, Tunay
Turan, Raşit
Kocabas, Coskun
Aydinli, Atilla

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Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al2O3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (lambda(cut-off) similar to 5.1 mu m). Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 10(13) Jones, respectively at 4 mu m and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors. This conformal passivation technique is promising for focal plane array (FPA) applications. (C) 2012 American Institute of Physics.

Subject Keywords

Oxides

URI

https://hdl.handle.net/11511/28506

Journal

Journal of Applied Physics

DOI

https://doi.org/10.1063/1.3702567

Collections

Department of Physics, Article

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Citation Formats

O. Salihoglu et al., “Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors,” Journal of Applied Physics, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/28506.