Ultrathin Si solar cell with nanostructured light trapping by metal assisted etching

Date

2018-06-15

Author

Hadibrata, Wisnu
Es, Fırat
Yerci, Selçuk
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

208
views

0
downloads

We report an 8 mu m-thick silicon solar cell with an efficiency of 9.60%. Nanostructured silicon surface formed via metal assisted etching shows a broadband reflection below 10%. Despite the excellent optical performance, a moderate short-circuit current (J(SC)) of 25.44 mA/cm(2) was collected. Relatively low external quantum efficiency (EQE) at short wavelengths was associated with carrier recombination at the enhanced surface and by the Auger process. Moreover, parasitic absorption at the back contact is the main factor resulting a relatively low EQE in long wavelength region of the spectrum. Our optical simulations show that planarization of the rear Si surface and insertion of a low refractive index dielectric spacer between Si and the rear metal can significantly reduce the parasitic absorption in the metal, resulting in J(SC) values over 35 mA/cm(2).

Subject Keywords

Solar cell, Photovoltaic, C-Si, Metal assisted etching, Thin Silicon

URI

https://hdl.handle.net/11511/30045

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS

DOI

https://doi.org/10.1016/j.solmat.2017.06.029

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Ultrathin Si solar cell with nanostructured light trapping by metal assisted etching Hadibrata, Wisnu; Es, Fırat; Turan, Raşit; Yerci, Selçuk (null; 2017-12-01) We report an 8 mu m-thick silicon solar cell with an efficiency of 9.60%. Nanostructured silicon surface formed via metal assisted etching shows a broadband reflection below 10%. Despite the excellent optical performance, a moderate short-circuit current (J(SC)) of 25.44 mA/cm(2) was collected. Relatively low external quantum efficiency (EQE) at short wavelengths was associated with carrier recombination at the enhanced surface and by the Auger process. Moreover, parasitic absorption at the back contact is ...
Contact resistivity analysis of different passivation layers via transmission line method measurements Kökbudak, Gamze; Turan, Raşit; Yerci, Selçuk; Department of Micro and Nanotechnology (2017) Crystalline silicon (c-Si) homojunction solar cells constitute over 90% of the current photovoltaic market. Although the standard solar cells are cost effective and easy to process, their efficiency potential is unfortunately limited. Currently, more innovative cell concepts appeared with their high efficiency potential coupled with low costs. Since the recombination at surfaces and under metal contacts is one of the major obstacles against high conversion efficiencies, surface passivation has primary impor...
Optical light management by self-arrangement of inverted tetragonal pyramids on the silicon surface through copper-assisted etching technique in a single step Donercark, Ergi; Çolakoğlu, Tahir; Terlemezoğlu, Makbule; Abak, Musa Kurtulus; Çiftpınar, Emine Hande; Bek, Alpan; Turan, Razit (2022-09-01) Developing efficient light trapping techniques plays a crucial role in improving silicon (Si) solar cell parameters by decreasing optical losses. Herein, four various surface morphologies by copper-assisted chemical etching (Cu-ACE) technique under various process conditions were developed. The etching solution is composed of copper nitrate trihydrate (Cu[NO3](2)), hydrofluoric acid, and hydrogen peroxide in deionized water. The systematic correlation study on the molarity of the chemical ingredients reveal...
Radial junction solar cells prepared on single crystalline silicon wafers by metal-assisted etching BAYTEMİR, Gulsen; ES, FIRAT; ALAGOZ, Arif Sinan; Turan, Raşit (2017-05-01) Radial junction solar cells have been proposed as an alternative device geometry to conventional planar solar cells with its remarkable electrical and optical performance. In this geometry, densely packed nano/micropillars allow minority carrier collection in the radial direction and shorten carrier diffusion length to p-n junction. Besides, reduced reflection from surface and increased light trapping in nano/micropillars enhance solar cell efficiency. In this study, photolithography and metal-assisted etch...
Electron-Selective Contacts For N-Type Crystalline Silicon Solar Cells: A Study On An Ultrathin Zirconium Oxide Layer Madbouly, Loay Akmal Mostafa Kamal; Ünalan, Hüsnü Emrah; Turan, Raşit; Department of Metallurgical and Materials Engineering (2022-9-2) Crystalline silicon (c-Si) solar cell efficiencies have peaked at around 26%. To get closer and even go beyond the Shockley-Queisser Limit, passivation of the rear contact of c-Si solar cells is mandatory. Formation of ohmic, low-resistance and economically feasible contacts is impeded by the fermi-level pinning phenomenon in lightly doped n-type c-Si (n-Si). Over the past two decades, much research has been done to find materials that can replace the commonly used silicon dioxide (SiO2) as it showed electr...

Citation Formats

W. Hadibrata, F. Es, S. Yerci, and R. Turan, “Ultrathin Si solar cell with nanostructured light trapping by metal assisted etching,” SOLAR ENERGY MATERIALS AND SOLAR CELLS, pp. 247–252, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30045.