Strain Engineering of Germanium Nanobeams by Electrostatic Actuation

Download

s41598-019-41097-1.pdf

Date

2019-03-21

Author

Ayan, Arman
Turkay, Deniz
Unlu, Buse
Naghinazhadahmadi, Parisa
Oliaei, Samad Nadimi Bavil
Boztug, Cicek
Yerci, Selçuk

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

211
views

80
downloads

Germanium (Ge) is a promising material for the development of a light source compatible with the silicon microfabrication technology, even though it is an indirect-bandgap material in its bulk form. Among various techniques suggested to boost the light emission efficiency of Ge, the strain induction is capable of providing the wavelength tunability if the strain is applied via an external force. Here, we introduce a method to control the amount of the axial strain, and therefore the emission wavelength, on a suspended Ge nanobeam by an applied voltage. We demonstrate, based on mechanical and electrical simulations, that axial strains over 4% can be achieved without experiencing any mechanical and/or electrical failure. We also show that the non-uniform strain distribution on the Ge nanobeam as a result of the applied voltage enhances light emission over 6 folds as compared to a Ge nanobeam with a uniform strain distribution. We anticipate that electrostatic actuation of Ge nanobeams provides a suitable platform for the realization of the on-chip tunable-wavelength infrared light sources that can be monolithically integrated on Si chips.

Subject Keywords

Tensile strain, Light-emission, Silicon, Ge, Range, Wavelength

URI

https://hdl.handle.net/11511/30158

Journal

SCIENTIFIC REPORTS

DOI

https://doi.org/10.1038/s41598-019-41097-1

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Strain induction on GE nanobeams by electrostatic actuation Ayan, Arman; Yerci, Selçuk; Department of Electrical and Electronics Engineering (2018) Germanium (Ge) is one of the most promising materials to accomplish the monolithic integration of optics and electronics on the same chip, mainly due to its compatibility with the existing silicon (Si) technology, high charge carrier mobility and high absorption coefficient in the near-infrared region. However, realization of efficient Ge light emitters requires techniques such as tensile strain induction, tin (Sn) incorporation and/or heavy n-type doping to alter its band gap enabling direct transitions. A...
Effect of halloysite nanotubes on multifunctional properties of coaxially electrospun poly(ethylene glycol)/polyamide-6 nanofibrous thermal energy storage materials Yilmaz, Refik Baris; Bayram, Göknur; YILMAZER, ÜLKÜ (Elsevier BV, 2020-08-01) Coaxial electrospinning of poly(ethylene glycol) (PEG)/polyamide 6 (PA6) was successfully used in development of nanofibrous thermal energy storage (TES) material. Halloysite nanotubes (HNTs) were introduced into the core/shell structured TES materials at various concentrations (0.5, 1, 3 and 5 wt. %). Surface activation of HNT was also conducted by piranha etching in order to increase the affinity between piranha-etched nanotubes (HNT-P) and PEG. The core/shell structured materials were characterized using...
Stress evolution of Ge nanocrystals in dielectric matrices Bahariqushchi, Rahim; Raciti, Rosario; KASAPOGLU, Ahmet Emre; GÜR, Emre; Sezen, Meltem; Kalay, Yunus Eren; MIRABELLA, Salvatore; Aydınlı, Alptekin (2018-05-04) Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N-2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope mi...
Strain Gradient Crystal Plasticity Approach to Modelling Micro-Plastic Flow and Localisation in Polycrystalline Materials Simonovski, Igor; Yalçınkaya, Tuncay (2015-09-17) Structural materials in the reactor pressure vessels are exposed to a harsh environment, resulting in a number of material degradation processes. Irradiation generates a number of point defects in the atomic structure of a material. In addition, plastic slip localization occurs on the grain level size where highly-deformed narrow bands of material appear already at the moderate strain levels. These bands are called channels or clear bands, because they are almost empty of irradiation defects, whereas the su...
Surface preparation passivation and patterning techniques used in silicon based heterojunction solar cells Dönerçark, Ergi; Turan, Raşit; Department of Physics (2017) For silicon Heterojunction (SHJ) solar cell technology features, a thin intrinsic hydrogenated amorphous silicon (i a-Si:H) layer has inserted between the crystalline silicon and doped amorphous silicon. The state of the art SHJ solar cell structure involves low temperature depositions of a-Si:H layer by means of Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Recent developments on SHJ solar cells have been focused on increasing the passivation quality of a-Si:H layer and the formation of all ...

Citation Formats

A. Ayan et al., “Strain Engineering of Germanium Nanobeams by Electrostatic Actuation,” SCIENTIFIC REPORTS, pp. 0–0, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30158.