Determination of ion dose and profiles in Ge-74 and Sn-120 implanted silicon layers by PIXE, NAA, RBS and SIMS

Belin, B
Bode, P
Turan, Raşit
Van Meerten, TG
Implanted Ge-74 and Sn-121 concentrations in silicon (Si) layers were investigated by particle induced X-ray emission (PIXE), instrumental neutron activation analysis (INAA), Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). Slight differences were observed in the results obtained. It was shown that PIXE and INAA are as powerful as the traditional RBS and SIMS spectroscopy for the investigation of thin layered Si.


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Citation Formats
B. Belin, P. Bode, R. Turan, and T. Van Meerten, “Determination of ion dose and profiles in Ge-74 and Sn-120 implanted silicon layers by PIXE, NAA, RBS and SIMS,” JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, pp. 479–483, 2004, Accessed: 00, 2020. [Online]. Available: