Gence Bektaş

E-mail

gence@metu.edu.tr

Department

Center for Solar Energy Research and Applications (GÜNAM)

Room-temperature electron-selective passivating contact with titanium–peroxo complexes for high-efficiency silicon solar cells Beyraghi, Naser; Bektaş, Gence; Donmez, Doguscan; Dehnavi, Mohammad; Chen, Daming; Chen, Yifeng; Feng, Zhiqiang; Shen, Hui; Günbaş, Emrullah Görkem; Yerci, Selçuk (2026-01-01) The increasing demand for high-performance and cost-effective solar cells is a driving factor in the development of new nanomaterials or compounds compatible with low-cost, low-temperature fabrication routes. Titanium oxid...
Self-Assembled Superacid Monolayers on c-Si Provide Exceptional Surface Passivation and Low Contact Resistivity Ghasemi, Milad; Maden, Cem; Bektaş, Gence; Tsoi, Konstantin; Günbaş, Emrullah Görkem; Toffoli, Hande; Yerci, Selçuk (2025-01-01) Minimizing surface recombination is crucial for enhancing silicon solar cell passivation. Conventional dielectric materials require vacuum deposition and high-temperature annealing, increasing complexity and cost. This stu...
Interfacial modification by 2-fluoroisonicotinic acid enabling high-efficiency and stable n-i-p perovskite solar cells Sun, Lei; Zhang, Chu; Bektaş, Gence; Li, Xiaowei; Ma, Chunying; Ma, Tingli (2024-12-01) The power conversion efficiency (PCE) of organic-inorganic halide perovskite solar cells (PSCs) developed rapidly in recent years. However, the defects at the bulk grain boundaries and heterojunction interfaces acting as n...
Influence of boron doping profile on emitter and metal contact recombination for n-PERT silicon solar cells Bektaş, Gence; Aslan, Sercan; Keçeci, Ahmet Emin; Özyahni, Vahdet; Canar, Hasan Hüseyin; Asav, Hasan; Seyrek, Selin; Verlinden, Pierre J.; Turan, Raşit (2024-08-01) Increasing interest in n-type silicon (Si) solar cells due to the high-quality material properties of the n-Si wafers, their relatively low sensitivity to donor-like impurities like iron and their resistance to light-induc...
Development of Low-Cost c-Si-Based CPV Cells for a Solar Co-Generation Absorber in a Parabolic Trough Collector Aydin, Elsen; Buchroithner, Armin; Felsberger, Richard; Preßmair, Rupert; Azgın, Ahmet; Turan, Raşit; Keçeci, Ahmet Emin; Bektaş, Gence; Akınoğlu, Bülent Gültekin (2024-06-01) Concentrator photovoltaics (CPVs) have demonstrated high electrical efficiencies and technological potential, especially when deployed in CPV–thermal (CPV-T) hybrid absorbers, in which the cells’ waste heat can be used to ...
On the passivation performance of SiNx, SiOxNy and their stack on c-Si wafers for solar cell applications: Correlation with optical, chemical and interface properties Canar, Hasan Hüseyin; Bektaş, Gence; Turan, Raşit (2023-07-01) SiNx and SiOxNy layers deposited by the PECVD method are commonly used in silicon solar cells for theirexcellent thin film properties. In this study, we perform an experimental analysis of the optical, chemical andelectric...
The effect of SiNx:H stoichiometry on electrical and chemical passivation of Al2O3/SiNx:H stack layer on p-type silicon wafers Canar, Hasan Hüseyin; Bektaş, Gence; Keçeci, Ahmet Emin; Asav, Hasan; Bütüner, Sümeyye Koçak; Arlkan, Bülent; Turan, Raşit (2023-06-27) In this paper, we report on the influence of SiNx:H stoichiometry on Al2O3/SiNx:H passivation stacks. We analyze the fabricated dielectric layers with four methods: FTIR, C-V, PCD and EQE. SiNx:H with a lower refractive in...
Optimization of front and rear surface dielectric passivation layers for ion implanted PERC solar cells Bektaş, Gence; Canar, Hasan Hüseyin; Keçeci, Ahmet Emin; Asav, Hasan; Seyrek, Selin; Bütüner, Sümeyye Koçak; Turan, Raşit (2023-06-27) Ion implantation is an alternative doping method providing a controlled emitter profile and manufacturing simplicity for PERC solar cells. SiNx:H and SiOxNy:H layers deposited by the PECVD system are common dielectric laye...
Impact of ion implantation and annealing parameters on bifacial PERC and PERT solar cell performance Siddiqui, Amna; Bektaş, Gence; Nasser, Hisham; Turan, Raşit; Usman, Muhammad (2022-10-01) © 2022 Elsevier LtdPassivated Emitter and Rear Contact (PERC) and Passivated Emitter Rear Totally Diffused (PERT) solar cell designs are now a market reality. In the production of these cells, ion implantation is another m...
Effect of Implanted Phosphorus Profile on iVoc Variations During Firing Process of n-type Silicon Bektaş, Gence; Çiftpınar, Emine Hande; Bütüner, Sümeyye Koçak; Keçeci, Ahmet Emin; Canar, Hasan Hüseyin; Kökbudak, Gamze; Asav, Hasan; Turan, Raşit (2022-08-24) Electrical activation of implanted phosphorus can be carried out simultaneously with boron dopants at high temperatures or separately at lower temperatures. In this study, we investigate the effect of high and low-temperat...

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