Gence Bektaş

E-mail

gence@metu.edu.tr

Department

Center for Solar Energy Research and Applications (GÜNAM)

On the passivation performance of SiNx, SiOxNy and their stack on c-Si wafers for solar cell applications: Correlation with optical, chemical and interface properties Canar, Hasan Hüseyin; Bektaş, Gence; Turan, Raşit (2023-07-01) SiNx and SiOxNy layers deposited by the PECVD method are commonly used in silicon solar cells for theirexcellent thin film properties. In this study, we perform an experimental analysis of the optical, chemical andelectric...
The effect of SiNx:H stoichiometry on electrical and chemical passivation of Al2O3/SiNx:H stack layer on p-type silicon wafers Canar, Hasan Hüseyin; Bektaş, Gence; Keçeci, Ahmet Emin; Asav, Hasan; Bütüner, Sümeyye Koçak; Arlkan, Bülent; Turan, Raşit (2023-06-27) In this paper, we report on the influence of SiNx:H stoichiometry on Al2O3/SiNx:H passivation stacks. We analyze the fabricated dielectric layers with four methods: FTIR, C-V, PCD and EQE. SiNx:H with a lower refractive in...
Optimization of front and rear surface dielectric passivation layers for ion implanted PERC solar cells Bektaş, Gence; Canar, Hasan Hüseyin; Keçeci, Ahmet Emin; Asav, Hasan; Seyrek, Selin; Bütüner, Sümeyye Koçak; Turan, Raşit (2023-06-27) Ion implantation is an alternative doping method providing a controlled emitter profile and manufacturing simplicity for PERC solar cells. SiNx:H and SiOxNy:H layers deposited by the PECVD system are common dielectric laye...
Impact of ion implantation and annealing parameters on bifacial PERC and PERT solar cell performance Siddiqui, Amna; Bektaş, Gence; Nasser, Hisham; Turan, Raşit; Usman, Muhammad (2022-10-01) © 2022 Elsevier LtdPassivated Emitter and Rear Contact (PERC) and Passivated Emitter Rear Totally Diffused (PERT) solar cell designs are now a market reality. In the production of these cells, ion implantation is another m...
Effect of Implanted Phosphorus Profile on iVoc Variations During Firing Process of n-type Silicon Bektaş, Gence; Çiftpınar, Emine Hande; Bütüner, Sümeyye Koçak; Keçeci, Ahmet Emin; Canar, Hasan Hüseyin; Kökbudak, Gamze; Asav, Hasan; Turan, Raşit (2022-08-24) Electrical activation of implanted phosphorus can be carried out simultaneously with boron dopants at high temperatures or separately at lower temperatures. In this study, we investigate the effect of high and low-temperat...
Performance Enhancement of PERC Solar Cell with SiOxNy Back Surface Passivation by Low Temperature Annealing Process KEÇECİ, AHMET EMİN; Bektaş, Gence; Turan, Raşit (2021-12-31)
Comparison of Electrical Performances of Fully Ion Implanted n-PERT Solar Cells Made of Different n-Type Wafer Feedstocks Bektaş, Gence; Turan, Raşit (2021-12-31)
Effect of surface morphology on passivation quality of Al2O3/SiNx stack layer for PERC solar cell KOÇAK BÜTÜNER, SÜMEYYE; Bektaş, Gence; Turan, Raşit (2021-12-31)
Effect of Doping Profile on Contact Resistivity Between Screen Printed Ag/Al and Implanted Boron Emitter EGE, ÖZMEN; Bektaş, Gence; Turan, Raşit (2021-12-31)
Yüksek Verimli PERC Güneş Pilleri için Pikosaniye Atımlı Lazer ile Lazer Doping Yoluyla Seçici Emitör Oluşumu Bektaş, Gence (2021-11-01) In this study, we develop a POCl3 diffusion recipe so that we obtain a thicker phosphosilicate glass layer for laser doping. The formation of a laser doped selective emitter is achieved by utilizing an industrial-type pico...

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