Effect of Implanted Phosphorus Profile on iVoc Variations During Firing Process of n-type Silicon

Bektaş, Gence
Çiftpınar, Emine Hande
Bütüner, Sümeyye Koçak
Keçeci, Ahmet Emin
Canar, Hasan Hüseyin
Kökbudak, Gamze
Asav, Hasan
Turan, Raşit
Electrical activation of implanted phosphorus can be carried out simultaneously with boron dopants at high temperatures or separately at lower temperatures. In this study, we investigate the effect of high and low-temperature annealing processes for dopant activation following the phosphorous implantation process in n-type c-Si. Symmetrically implanted wafers are activated at 875 °C (low temperature) and 1050 °C (high temperature) and subsequently coated with PEC VD SiNx:H. iVoc values of the samples activated at 1050 °C significantly decrease while those for the samples activated at 875 °C increase at a typical firing peak temperature which is generally applied for fire-through contact formation. We also show a strong dependence of iVoc values of phosphorous implanted and unimplanted c-Si, which are activated at both high and low temperatures, on peak firing temperature.
11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021


Effect of non-condensable gases on the adsorption properties of adsorbent porous media
Bayman, Orhan Ata; Yamalı, Cemil; Department of Mechanical Engineering (2014)
Non-condensable gases such as air can penetrate into adsorption machines that utilize adsorbates which work at negative gage pressures. As many adsorption cooling/heat pump applications involve such negative gage pressures, it becomes important to research the effects of such non-condensable gases on the adsorption properties. In this thesis, prescribed amounts of air have been injected into an experimental apparatus containing an adsorbent bed and an evaporator/condenser to observe the effects of air on th...
BINNATOV, KG; RODIONOV, YL; Mehrabov, Amdulla; ALIZADE, II (1990-01-01)
This paper reports that the oxygen, hydrogen, carbon, nitrogen, and sulfur contents of steels and alloys can vary as a result of irradiation by electrons and gamma rays at comparatively low temperatures. As this takes place, the materials can be either saturated with these elements, or these elements can be removed from the irradiated materials, depending on the irradiation medium. Transformations are initiated as a result of radiation-stimulated oxygenation of copper-iron, iron-manganese, and iron-nickel a...
Effect of microwave and conventional sintering on properties of soft magnetic Ni-Fe alloys
Erdem, Derya; Dericioğlu, Arcan Fehmi (2011-01-01)
In this study, soft magnetic Ni-Fe permalloy compacts were consolidated through microwave and conventional sintering routes at combinations of various sintering temperatures and compaction pressures. Sintered alloys were characterized in terms of their densification, microstructural evolution as well as magnetic and machanical properties. The effect of sintering method in terms of the applied sintering parameters on the final properties of the compacts were investigated in a comparative manner. It was deter...
Effect of mechanical vibration on the microstructure and the mechanical properties of 7075 aluminum alloy produced by semi-solid melting method
Poyraz, Cemre Metin; Kalkanlı, Ali; Department of Metallurgical and Materials Engineering (2019)
This study aims to understand the effect of the semi-solid melting process parameters such as casting temperature and vibration frequency on the mechanical, thermal and microstructural properties. For this purpose, rheocasting of 7075 aluminum alloy with and without B4C as 7075 matrix composite were carried out at various temperatures in between 620-635oC under different vibration frequencies in the range of 15-35 Hz. For this purpose, rheocasting experiments were carried out successfully Microstructure, th...
Effect of Au on the crystallization of germanium thin films by electron-beam evaporation
EYGİ, ZEYNEP DENİZ; KULAKCI, MUSTAFA; Turan, Raşit (2014-11-01)
Metal induced crystallization is a widely used method to form crystalline/polycrystalline structures at low temperatures. In this work, Au was applied to enhance the crystallization of amorphous Ge films. Ge films with thicknesses of similar to 1.5 mu m were fabricated by electron beam evaporation on c-Si substrate with and without very thin Au layer. Crystallization properties of Ge films were analyzed for different growth and post annealing temperatures varied between 270 degrees C and 730 degrees C. The ...
Citation Formats
G. Bektaş et al., “Effect of Implanted Phosphorus Profile on iVoc Variations During Firing Process of n-type Silicon,” Hamelin, Virtual, Almanya, 2022, vol. 2487, Accessed: 00, 2022. [Online]. Available: https://hdl.handle.net/11511/99692.