Substitutional impurities in semiconductors.

1981
Sütçü, Leyla

Suggestions

Substitutional doping of B, Al and N in C-60 structure
Türker, Burhan Lemi (2002-09-27)
Substitutional doping of B, Al and N atoms in C-60 skeleton are investigated by using AMI (UHF) type semiempirical quantum chemical calculations. Energetically they are all stable but highly endothermic structures. However, the size of Al atom may be a considerable drawback.
Substitution studies of metal carbonyl phophine complexes of tungsten.
Sultan, Waide I M; Department of Chemistry (1993)
Substitution kinetics of cyclooctadiene in tetracarbonyl(cyclooctadiene) metal (zero)metal chromium, molybdenum, tungsten) by bis (diphenylphosphino) methane
Saldamlı, Saltuk; Özkar, Saim; Department of Chemistry (1995)
Substitution kinetics of W(CO)(5)(eta(2)-bis(trimethylsilyl)ethyne) with triphenylbismuthine
Bayram, Ercan; Özkar, Saim (Elsevier BV, 2006-07-15)
The labile complex W(CO)(5)(eta(2)-btmse) undergoes replacement of bis(trimethylsilyl)ethyne, btmse, by triphenylbismuthine in cyclohexane solution at an observable rate in the temperature range of 35-50 degrees C yielding almost solely W(CO)(5)(BiPh3) as the final product. The kinetics of this substitution reaction was studied in cyclohexane solution by quantitative FT-IR spectroscopy. The substitution reaction obeys a pseudo-first-order kinetics with respect to the concentration of the starting complex. T...
Substitution kinetics of cyclooctadiene in tetracarbonyl (cyclooctadiene) molybdenum(zero) by tetraalkyldiphosphinedisulfide
Öztürk, Özkan; Özkar, Saim; Department of Chemistry (1997)
Citation Formats
L. Sütçü, “Substitutional impurities in semiconductors.,” Middle East Technical University, 1981.