A figure of merit for optimization of nanocrystal flash memory design

Download

index.pdf

Date

2008-02-01

Author

DANA, Aykutlu
Akca, Imran
AYDINLI, ATİLLA
Turan, Raşit
Finstad, Terje G.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

124
views

0
downloads

Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel dielectric properties. The performance of a nanocrystal memory device can be expressed in terms of write/erase speed, carrier retention time and cycling durability. We present a model that describes the charge/discharge dynamics of nanocrystal flash memories and calculate the effect of nanocrystal, gate, tunnel dielectric and substrate properties on device performance. The model assumes charge storage in quantized energy levels of nanocrystals. Effect of temperature is included implicitly in the model through perturbation of the substrate minority carrier concentration and Fermi level. Because a large number of variables affect these Performance measures, in order to compare various designs, a figure of merit that measures the device performance in terms of design parameters is defined as a function of write/erase/discharge times which are calculated using the theoretical model. The effects of nanocrystal size and density, gate work function, substrate doping, control and tunnel dielectric properties and device geometry on the device performance are evaluated through the figure of merit. Experimental data showing agreement of the theoretical model with the measurement results are presented for devices that has PECVD grown germanium nanocrystals as the storage media.

Subject Keywords

General Materials Science, Bioengineering, General Chemistry, Condensed Matter Physics, Biomedical Engineering

URI

https://hdl.handle.net/11511/35072

Journal

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

DOI

https://doi.org/10.1166/jnn.2008.a156

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Design and simulation of a flash translation layer algorithm Ayar, Yusuf Yavuz; Özgit, Attila; Department of Computer Engineering (2010) Flash Memories have been widely used as a storage media in electronic devices such as USB flash drives, mobile phones and cameras. Flash Memory offers a portable and non-volatile de- sign, which can be carried to everywhere without data loss. It is durable against temperature and humidity. With all these advantages, Flash Memory gets popular day by day. However, Flash Memory has also some disadvantages, such as erase-before restriction and erase limi- tation of each individual block. Erase-before restrictio...
Scanning Hall Probe Microscopy (SHPM) using quartz crystal AFM feedback Dede, M.; Uerkmen, K.; Girisen, Oe.; Atabak, M.; Oral, Ahmet; Farrer, I.; Ritchie, D. (American Scientific Publishers, 2008-02-01) Scanning Hall Probe Microscopy (SHPM) is a quantitative and non-invasive technique for imaging localized surface magnetic field fluctuations such as ferromagnetic domains with high spatial and magnetic field resolution of similar to 50 nm and 7 mG/Hz(1/2) at room temperature. In the SHPM technique, scanning tunneling microscope (STM) or atomic force microscope (AFM) feedback is used to keep the Hall sensor in close proximity of the sample surface. However, STM tracking SHPM requires conductive samples; ther...
An algorithm for constructing various kinds of nanojunctions using zig-zag and armchair nanotubes Tasci, Emre; Erkoç, Şakir (American Scientific Publishers, 2007-04-01) A method for generating various forms of junctions involving armchair and zig-zag nanotubes, firstly introduced by Zsoldos et al., is developed to cover all types of armchair and zig-zag nanotubes in a systematical way. This method can also be used to produce nanogears and toothed canals. The method is explained and flowcharts are included to aid in programming into a code.
Lithium-intercalation oxides for rechargeable batteries Ceder, Gerbrand; VanderVen, Anton; Aydınol, Mehmet Kadri (Springer Science and Business Media LLC, 1998-09-01) Since the introduction of the LixC/LiCoO2 cell, rechargeable lithium batteries have become the technology of choice for applications where volume or weight are a consideration (e.g., laptop computers and cell phones). The focus of current research in cathode-active materials is on less-expensive or higher-performance materials than LiCoO2. This article illustrates how first-principles calculations can play a critical role in obtaining the understanding needed to design improved cathode oxides.
Numerical study on effects of computational domain length on flow field in standing wave thermoacoustic couple MERGEN, SÜHAN; Yıldırım, Ender; TÜRKOĞLU, HAŞMET (Elsevier BV, 2019-03-01) For the analysis of thermoacoustic (TA) devices, computational methods are commonly used. In the computational studies found in the literature, the flow domain has been modelled differently by different researchers. A common approach in modelling the flow domain is to truncate the computational domain around the stack, instead of modelling the whole resonator to save computational time. However, where to truncate the domain is not clear. In this study, we have investigated how the simulation results are aff...

Citation Formats

A. DANA, I. Akca, A. AYDINLI, R. Turan, and T. G. Finstad, “A figure of merit for optimization of nanocrystal flash memory design,” JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, pp. 510–517, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35072.