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The Electronıc-Structure Of In1-Xgaxp Alloy By The Recursıon Method
Date
1988-03-01
Author
ELHASAN, M
Tomak, Mehmet
Metadata
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The electronic structure calculation of In1−x Ga x P alloy using the recursion method is reported. A five-orbitals,sp 3 s *, per atom model is used in the tight-binding representation of the Hamiltonian. The local densities of states are calculated for In, Ga and P sites in a cluster of 216 atoms. The results are in reasonably good agreement with previous calculations.
Subject Keywords
General Physics and Astronomy
URI
https://hdl.handle.net/11511/35637
Journal
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS
DOI
https://doi.org/10.1007/bf02450122
Collections
Department of Physics, Article
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M. ELHASAN and M. Tomak, “The Electronıc-Structure Of In1-Xgaxp Alloy By The Recursıon Method,”
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS
, pp. 323–330, 1988, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35637.