The Electronıc-Structure Of In1-Xgaxp Alloy By The Recursıon Method

Date

1988-03-01

Author

ELHASAN, M
Tomak, Mehmet

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The electronic structure calculation of In1−x Ga x P alloy using the recursion method is reported. A five-orbitals,sp 3 s *, per atom model is used in the tight-binding representation of the Hamiltonian. The local densities of states are calculated for In, Ga and P sites in a cluster of 216 atoms. The results are in reasonably good agreement with previous calculations.

Subject Keywords

General Physics and Astronomy

URI

https://hdl.handle.net/11511/35637

Journal

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS

DOI

https://doi.org/10.1007/bf02450122

Collections

Department of Physics, Article

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Citation Formats

M. ELHASAN and M. Tomak, “The Electronıc-Structure Of In1-Xgaxp Alloy By The Recursıon Method,” NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, pp. 323–330, 1988, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35637.