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The Electronıc-Structure Of In1-Xgaxp Alloy By The Recursıon Method

1988-03-01
ELHASAN, M
Tomak, Mehmet
The electronic structure calculation of In1−x Ga x P alloy using the recursion method is reported. A five-orbitals,sp 3 s *, per atom model is used in the tight-binding representation of the Hamiltonian. The local densities of states are calculated for In, Ga and P sites in a cluster of 216 atoms. The results are in reasonably good agreement with previous calculations.