Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction

Date

2001-05-01

Author

Turan, Raşit
Nur, O
Yousif, MYA
Willander, M

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

39
views

0
downloads

We have studied the effect of the strain relaxation on the band-edge alignments in a Pt/p-Si1-xGex Schottky junction with x = 0.14 by internal photoemission spectroscopy and current-voltage measurements. We have shown that the variations in the band-edge alignments can be observed directly by measuring the optical and electrical properties of a simple Schottky junction. The strain in the Si1-xGex layer has been partially relaxed by thermal treatments at two different temperatures, The degree of relaxation and other structural changes have been determined by a high-resolution X-ray diffractometer. Both optical and electrical techniques have shown that the barrier height of the Pt/Si0.86Ge0.14 junction increases with the amount of relaxation in the Si1-xGex layer. This shows that the valence-band edge of the Si1-xGex layer moves away from the Fermi level of the Pt/Si1-xGex junction. The band-edge movement results from the increase in the band gap of the Si1-xGex layer after the strain relaxation. This result agrees with the theoretical predictions for the strain-induced effects on the Si1-xGex band structure.

Subject Keywords

General Materials Science, General Chemistry

URI

https://hdl.handle.net/11511/36211

Journal

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

DOI

https://doi.org/10.1007/s003390100827

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2004-05-01) TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 ...
Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals Hasanlı, Nızamı (Wiley, 2003-01-01) The linewidths of Raman-active intralayer compressional modes in GaS1-xSex layered mixed crystals (0 less than or equal to x less than or equal to 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of t...
Analysis and calculation of the magnetization, magnetic susceptibility and the specific heat close to phase transitions in heterometallics Dugan, E. Kilit; Yurtseven, Hasan Hamit (Elsevier BV, 2019-10-01) The temperature dependence of the magnetization for DMFeNi and DMFeCu is calculated by the molecular field theory and it is also analyzed as functions of temperature and the magnetic field by the power-law formulae close to the phase transitions in these compounds by using the observed data from the literature. From the analysis, values of the critical exponents beta (temperature-induced order parameter at H = 100 Oe) and delta (field-induced order parameter at T = 2 K) are deduced. Also, using the observed...
Calculation of the specific heat from the Raman frequency shifts close to the tricritical and second order phase transitions in NH4Cl Kaya, D.; Yurtseven, Hasan Hamit (Elsevier BV, 2007-05-01) This study gives our calculation for the specific heat using our Raman frequency shifts of the v(5) (174 cm(-1)) mode close to the tricritical (P = 1.6 kbar) and second order (P = 2.8 kbar) phase transitions in NH4Cl. For this calculation we use as the values of the critical exponent for the specific heat, a = 0.11 (T < T-c and T > T-c) for the tricritical (T-c = 257.17 K), and a = 0.18 (T < T-c), a = 0.64 (T > T-c) for the second order (T-c = 268 K) phase transitions, which we deduce from our analysis of t...
Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals KARABULUT, ORHAN; Parlak, Mehmet; Turan, Raşit; SERİNCAN, UĞUR; Akınoğlu, Bülent Gültekin (Wiley, 2006-03-01) The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increa...

Citation Formats

R. Turan, O. Nur, M. Yousif, and M. Willander, “Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction,” APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, pp. 587–593, 2001, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36211.