Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals

Date

2006-03-01

Author

KARABULUT, ORHAN
Parlak, Mehmet
Turan, Raşit
SERİNCAN, UĞUR
Akınoğlu, Bülent Gültekin

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The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increased upon implantation and annealing which confirms a possibility of explanation the phenomenon within a framework of continuous trap levels. Photocurrent measurements as a function of photo-excitation intensity also support continuous distribution of localized states in the band gap.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/43320

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200510568

Collections

Department of Physics, Article

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Citation Formats

O. KARABULUT, M. Parlak, R. Turan, U. SERİNCAN, and B. G. Akınoğlu, “Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 243–249, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43320.