Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals

Date

2006-03-01

Author

KARABULUT, ORHAN
Parlak, Mehmet
Turan, Raşit
SERİNCAN, UĞUR
Akınoğlu, Bülent Gültekin

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

166
views

0
downloads

The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increased upon implantation and annealing which confirms a possibility of explanation the phenomenon within a framework of continuous trap levels. Photocurrent measurements as a function of photo-excitation intensity also support continuous distribution of localized states in the band gap.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/43320

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200510568

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2004-05-01) TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 ...
Influence of photonic excitations on the electrical parameters of TlInS2 crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2010-04-01) The photo-excitation effect on the current transport mechanism in TlInS2 crystals has been studied by means of dark and illuminated conductivity measurements. The temperature-dependent electrical conductivity analysis in the temperature region of 110-340 K revealed the domination of the thermionic emission and the thermally assisted variable range hopping (VRH) of charge carriers above and below 160 K, respectively. Above 160 K, the conductivity activation energies in the dark are found to be 0.28 and 0.15 ...
Effects of annealing on structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using sintered stoichometric powder KARAAĞAÇ, HAKAN; Parlak, Mehmet (Wiley, 2009-04-01) The structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450-600 degrees C. X-ray diffraction (X-RD) analysis showed that the structural transformation from amorphous to polycrystalline structure started at 450 degrees C with mixed binary phases of Ga2Se3, Ga2S3, ternary phase of AgGaS2 and single phase of S. The compositional analysis with the energy disp...
Electron-phonon short-range interactions mobility and p- to n-type conversion in TlGaS2 crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2006-02-01) The conductivity type conversion from p- to n-type at a critical temperature of 315 K in TlGaS2 crystals is observed through the Hall effect measurements in the temperature range of 200-350 K. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m(0...
Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals Hasanlı, Nızamı (Wiley, 2003-01-01) The linewidths of Raman-active intralayer compressional modes in GaS1-xSex layered mixed crystals (0 less than or equal to x less than or equal to 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of t...

Citation Formats

O. KARABULUT, M. Parlak, R. Turan, U. SERİNCAN, and B. G. Akınoğlu, “Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 243–249, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43320.