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Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals
Date
2006-03-01
Author
KARABULUT, ORHAN
Parlak, Mehmet
Turan, Raşit
SERİNCAN, UĞUR
Akınoğlu, Bülent Gültekin
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increased upon implantation and annealing which confirms a possibility of explanation the phenomenon within a framework of continuous trap levels. Photocurrent measurements as a function of photo-excitation intensity also support continuous distribution of localized states in the band gap.
Subject Keywords
General Materials Science
,
General Chemistry
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/43320
Journal
CRYSTAL RESEARCH AND TECHNOLOGY
DOI
https://doi.org/10.1002/crat.200510568
Collections
Department of Physics, Article