Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements

Date

2004-05-01

Author

Qasrawi, AF
Hasanlı, Nızamı

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TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 meV and a set of donor energy levels located at 360, 280, 220 and 170/152 meV are determined from the temperature dependencies of the carrier concentration and conductivity. A hole, electron, hole-electron pair effective masses of 0.24 in,, 0.14 m(o) and 0.09 m(o) and hole- and electron-phonon coupling constants of 0.50 and 0.64, respectively, are obtained from the Hall effect measurements. The theoretical fit of the Hall coefficient reveals a hole to electron mobility ratio of 0.8. (C) 2004 WILEY-VCH Verlag Gmbh & Co. KGaA, Weinheim.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/46277

Journal

CRYSTAL RESEARCH AND TECHNOLOGY

DOI

https://doi.org/10.1002/crat.200310208

Collections

Department of Physics, Article

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Citation Formats

A. Qasrawi and N. Hasanlı, “Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 439–447, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46277.