Effects of Si nanowire on the device properties of n-ZnSe/p-Si heterostructure

Date

2019-03-01

Author

COŞKUN, EMRE
Gullu, H. H.
Colakoglu, T.
Emir, C.
Bozdogan, E.
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

153
views

0
downloads

The semiconductor nanowire (NW) technology has raised attention owing to its one-dimensional geometry as a solution for lattice mismatch in the fabricated heterostructures. Although, SiNWs have been investigated for various device technologies, there is no published work on the p-n junction formed by deposition of ZnSe thin film on these NW structures, in which this film layer has significant optical and electrical properties in optoelectronics applications. The aim of this study is determining the device properties of n-ZnSe/SiNW heterojunction and obtaining the enhancement in the device application of the NW structure on Si surface with comparing to planar surface. SiNW was produced by metal assisted etching method as a cost-efficient process, and the ZnSe film was deposited on SiNW and planar Si substrates by thermal evaporation of elemental sources. The optical band gap of the deposited ZnSe film was determined as 2.7eV which is in a good agreement with literature. The ideality factor and series resistance values of the ZnSe/SiNW and ZnSe/Si heterojunctions were calculated as 3.12, 461 , and 4.52, 7.26x103, respectively. As a result of utilizing SiNW structure, a spectacular improvement in terms of the physical parameters related to device properties was achieved.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37921

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1007/s10854-019-00769-4

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Modification of TiO2(001) surface electronic structure by Au impurity investigated with density functional theory METE, ERSEN; GÜLSEREN, Oğuz; Ellialtıoğlu, Süleyman Şinasi (American Physical Society (APS), 2009-07-01) We have used density functional theory calculations based on the projector augmented wave method to investigate the electronic structure of Au-incorporated anatase TiO2(001) surface. Due to the coordination with several level oxygens, Au atoms can be encapsulated inside TiO2 slab. Au is adsorbed over the surface Ti-O bond, so-called the bridge site on anatase TiO2(001) - 1 X 1 surface. However, for 0.25 monolayer coverage, Au atoms energetically prefer to stay at 0.64 angstrom above the midpoint of the two ...
Extension of forward-backward method with DFT-based acceleration algorithm for the efficient analysis of large periodic arrays with arbitrary boundaries Aydın Çivi, Hatice Özlem; Chou, HT (Wiley, 2005-11-05) An extension of the discrete Fourier transform (DFT)-based forward-backward algorithm is developed using the virtual-element approach to provide a fast and accurate analysis of electromagnetic radiation/scattering front electrically large, planar, periodic, finite (phased) arrays with arbitrary boundaries. Both the computational complexity and storage requirements of this approach are O(N-tot) (N-tot is the total number of unknowns). The numerical results for both printed and freestanding dipole array's wit...
Structural and electronic properties of single-wall ZnO nanotubes Erkoç, Şakir; Kokten, H (Elsevier BV, 2005-07-01) The structural and electronic properties of armchair and zigzag models of single-wall ZnO nanotubes have been investigated by performing semiempirical molecular orbital self-consistent field calculations at the level of AM1 method within the RHF formulation. It has been found that these structures are stable and endothermic. The armchair model has zero net dipole moment, whereas the zigzag model has nonzero net dipole moment. The interfrontier molecular energy gap of these systems are different; the gap of ...
Effects of anisotropy of ferrite coating on the radiation characteristics of a cylindrical conductor excited by elementary sources Aydın Çivi, Hatice Özlem (Informa UK Limited, 1998-01-01) In this paper, radiation characteristics of an arbitrarily oriented source in an anisotropic multilayered cylindrical structure are investigated by using the state transition matrix approach. Full wave transversal field equations in spectral domain are derived for anisotropic medium in cylindrical coordinates. These expressions are formed into a set of linear first order differential equations. The solution at each layer is expressed in terms of the state transition matrices which are evaluated numerically....
A theoretical study of chemical doping and width effect on zigzag graphene nanoribbons Pekoz, Rengin; Erkoç, Şakir (Elsevier BV, 2009-12-01) The energetics and the electronic properties of nitrogen- and boron-doped graphene nanoribbons with zigzag edges have been investigated using density functional theory calculations. For the optimized geometry configurations, vibrational frequency analysis and wavefunction stability tests have been carried out. Different doping site optimizations for a model nanoribbon have been performed and formation energy values of these sites revealed that zigzag edgesite for both of the dopants were the most favorable ...

Citation Formats

E. COŞKUN, H. H. Gullu, T. Colakoglu, C. Emir, E. Bozdogan, and M. Parlak, “Effects of Si nanowire on the device properties of n-ZnSe/p-Si heterostructure,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 4760–4765, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37921.