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Acceptor 1s-2p(+/-) transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields
Date
1998-02-01
Author
Akbas, H
Aktas, S
Okan, SE
Ulas, M
Tomak, Mehmet
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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The valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s- and 2p(+/-)-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function epsilon(r) on the calculation of the transition energies are specifically investigated. The use of a constant epsilon(o) is shown to yield better agreement with experimental results.
Subject Keywords
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/38257
Journal
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
DOI
https://doi.org/10.1002/(sici)1521-3951(199802)205:2<537::aid-pssb537>3.0.co;2-i
Collections
Department of Physics, Article