Acceptor 1s-2p(+/-) transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields

1998-02-01
Akbas, H
Aktas, S
Okan, SE
Ulas, M
Tomak, Mehmet
The valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s- and 2p(+/-)-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function epsilon(r) on the calculation of the transition energies are specifically investigated. The use of a constant epsilon(o) is shown to yield better agreement with experimental results.
Citation Formats
H. Akbas, S. Aktas, S. Okan, M. Ulas, and M. Tomak, “Acceptor 1s-2p(+/-) transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields,” PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 205, no. 2, pp. 537–542, 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38257.