Acceptor 1s-2p(+/-) transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields

Date

1998-02-01

Author

Akbas, H
Aktas, S
Okan, SE
Ulas, M
Tomak, Mehmet

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The valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s- and 2p(+/-)-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function epsilon(r) on the calculation of the transition energies are specifically investigated. The use of a constant epsilon(o) is shown to yield better agreement with experimental results.

Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/38257

Journal

PHYSICA STATUS SOLIDI B-BASIC RESEARCH

DOI

https://doi.org/10.1002/(sici)1521-3951(199802)205:2<537::aid-pssb537>3.0.co;2-i

Collections

Department of Physics, Article

Citation Formats

H. Akbas, S. Aktas, S. Okan, M. Ulas, and M. Tomak, “Acceptor 1s-2p(+/-) transitions in GaAs/Ga0.7Al0.3As quantum wells: Effects of spatially dependent screening under electric and magnetic fields,” PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 205, no. 2, pp. 537–542, 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38257.